Disain dan simulasi pengganda frekwensi Fmax 120 GHz dengan heterojunction bipolar transistor silikon germanium.

Studi tentang pengaruh doping tinggi terhadap resistansi basis dan bandgap narroeing pada Si/Si 1-2 Gex/Si heterojunction bipolar transistor

Analisis penskalaan lateral dan vertikal dari rancangan silicon germanium haterojunction bipolar transistor (HBT'S SIGE) =Lateral and vertical scaling analysis of the silicon germanium heterojunction bipolar transistor's design (HBT's SiGe)

Field effect and bipolar power transistor physics

Design and realization of bipolar transistors / Peters Ashburn