Ditemukan 1 dokumen yang sesuai dengan query
Irma Saraswati
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ABSTRACT
A good justification for gallium nitride on silicon is a potential for optoelectronic integrated circuits, and its low cost has stimulated the growth of GaN on large size wafers. The application interest for GaN/Si is power electronics. This current work focuses on characterization optical, electro-optical, and microstructural and simulation design of GaN/Si channel waveguide. For the characterization of GaN microstructure, we use SEM, TEM, AFM, and XRD to observe layer thickness, material structure, material roughness, ...
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2016
D2035
UI - Disertasi Membership Universitas Indonesia Library