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Abstrak :
Electronic Devices and Circuit Theory, Eleventh Edition, offers a complete, comprehensive survey, focusing on all the essentials you will need to succeed on the job. Setting the standard for nearly 30 years, this highly accurate text is supported by strong pedagogy and content that is ideal for new students of this rapidly changing field. The colorful layout with ample photographs and examples helps you better understand important topics. This text is an excellent reference work for anyone involved with electronic devices and other circuitry applications, such as electrical and technical engineers.

Abstrak :
This new book demonstrates how FGMOS transistors can be used in a low voltage and low power design context. The techniques used provide innovative solutions, often in situations where the limits of the technology in question have been pushed far below the values recommended by the manufacturer. Motivated by consumer demand for smaller, more portable electronic devices, which offer more features and operate for longer on their existing battery packs, cutting edge electronic circuits need to be even more power efficient. This requires the circuit designer to have an understanding of the latest low voltage and low power (LV/LP) techniques which makes use of the floating gate MOS (FGMOS) transistor.

Abstrak :
This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications.

Abstrak :
This book describes methods to design distributed amplifiers useful for performing circuit functions such as duplexing, paraphrase amplification, phase shifting power splitting and power combiner applications. A CMOS bidirectional distributed amplifier is presented that combines for the first time device-level with circuit-level linearization, suppressing the third-order intermodulation distortion. It is implemented in 0.13um RF CMOS technology for use in highly-linear, low-cost UWB radio-over-fiber communication systems.