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Abstrak :
ABSTRAK
Penelitian dalam bidang nanoteknologi telah berkembang pesat dalam dekade terakhir ini, salah satunya adalah Single-Electron Devices. Dalam skripsi ini, kurva karakteristik arus-tegangan dari divais single-electron transistor (SET) disimulasikan dalam kasus empat parameter kerjanya divariasikan secara satu per satu. Keempat parameter itu adalah kapasitansi, resistansi, temperatur, dan impuritas. Struktur divais SET yang disimulasikan terbagi menjadi dua, satu yang menggunakan dua kapasitor dan lainnya yang menggunakan tiga kapasitor. Ketika simulasi dimulai, hanya satu parameter yang nilainya divariasikan sementara ketiga parameter lainnya tetap dijaga pada nilai awal yang telah ditentukan sebelum simulasi berjalan. Simulasi dijalankan dengan menggunakan Matlab 2008. Metode persamaan diturunkan berdasarkan master equation. Salah satu hasil yang didapat dari riset ini adalah resistansi sebagai parameter yang memberikan pengaruh paling signifikan pada rentang arus yang diukur, yaitu 10-11 A hingga 10-10 A pada struktur dua kapasitor dan 10-9 A hingga 10-8 A pada struktur tiga kapasitor. Adapun beberapa efek yang terjadi pada kurva karakteristik arus-tegangan adalah perubahan kualitas grafik, melemah/menguatnya karakteristik eksponensial dan/atau ideal, dan perubahan nilai step-width dan/atau step-height.

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ABSTRACT
The research in the field of nanotechnology has advanced rapidly within the last decade, one of them being Single-Electron Devices. In this script, the current-voltage characteristic curve of single-electron transistor (SET) device are simulated in the case of the four working parameters were varied one by one. Those four parameters were capacitances, resistances, temperature, and impurity. The device?s structure of SET being simulated was divided into two, one which was using two capacitors and the other which was using three capacitors. When the simulation was run, there is only one parameter which value was varied while the other three parameters were kept at starting value which had been decided before the simulation was run. The simulation was run by using Matlab 2008. The equation method was derived from master equation. One of the results gained from this research is resistance as the parameter which has the most significant influence over the range of the current being measured, which is 10-11 A to 10-10 A in two capasitors structure and 10-9 A to 10-8 A in three capasitors structure. Some of the effects that happened to the current-voltage characteristic curve are the change of graphical quality, the exponential and/or ideal characteristic becomes strongger/weaker, and the value change of step-width and/or step-height.

Abstrak :
Penggunaaan Single Electron Transistor SET merupakan salah satu pendekatan yang dilakukan untuk menggantikan penggunaan transistor. Meskipun SET memiliki ukuran divais dan konsumsi daya yang lebih kecil dibanding transistor biasa, suhu operasionalnya masih sangat rendah dibawah 50 Kelvin. Keterbatasan temperatur operasional pada SET ini menjadi salah satu masalah yang masih didiskusikan secara luas dalam pengaplikasian SET secara global. Skripsi ini melaporkan hasil simulasi rangkaian SET dengan Quantum Dot yang disusun seri dan dilihat perbandingan antara temperatur maksimal dengan jumlah Quantum Dot. Hasil simulasi di perangkat lunak SIMON 2.0 menunjukkan bahwa bertambahnya jumlah Quantum Dot yang disusun seri akan meningkatkan batas temperatur operasional dari SET. Dengan menggunakan pendekatan Multiple Quantum Dot, suhu operasional dari SET dapat mencapai 120 Kelvin. ......The usage of Single Electron Transistor SET is one of the alternatives to replace the usage of transistor. Although SET has a smaller size and power consumption compared to normal transistors, the operational temperature is still fairly low below 50 Kelvin . This limited operational temperature became the most controversial problem that is still being discussed before applying SET worldwide. This Undergraduate Thesis reports the result from a simulation of a SET circuit is designed with Quantum Dot connected in series and the connection between maximum operational temperature and the amount of Quantum Dot in series will be observed. The result of the simulation from SIMON 2.0 software shows that the increase in Quantum Dot aligned in series will increase the maximum operational temperature. Using the Multiple Quantum Dot approach, the operational temperature of the SET can reach up to 120 Kelvin.

Abstrak :
Elektron dapat dipindahkan satu persatu dalam konsep Single Electron Transistor (SET). Salah satu keunggulan SET adalah kemampuannya untuk mendeteksi adanya muatan yang sangat kecil. Dalam konsep quantum computing, pendeteksian ini diperlukan untuk menentukan kondisi dari suatu Quantum Dot (QD), apakah dalam kondisi logika 0 (tidak ada elektron) atau 1 (ada elektron). Pada riset ini, desain Double Quantum Dot (DQD) akan diteliti agar dapat mengontrol keberadaan elektron dalam suatu dot sebagai implementasi konsep quantum computing. Selanjutnya, desain SET charge detector akan ditambahkan untuk mendeteksi keberadaan elektron tersebut. Desain DQD dan SET charge detector akan disimulasikan dengan nilai parameter tertentu menggunakan software SIMON 2.0. Dari simulasi menggunakan rangkaian yang didesain, didapatkan bahwa keberadaan sebuah elektron dapat dikontrol dengan pemberian tegangan gate sebesar 200 µV. Antara gate dan QD dipisahkan oleh kapasitor sebesar 500 aF. Keberadaan elektron pada QD dideteksi oleh SET charge detector dengan terjadinya arus pada source. ......Electrons can be moved one by one in the concept of Single Electron Transistor (SET). One of the advantages of SET is its ability to detect the presence of a very small charge. In quantum computing concept, the detection is required to sense the condition of a Quantum Dot (QD), does the logic states 0 (there is no an electron) or 1 (there is an electron). In this research, design of a Double Quantum Dot (DQD) will be examined in order to manipulate the presence of electron in a QD as the implementation of quantum computing concept. Furthermore, design of a SET charge detector will be added to detect the presence of the electron. Design of DQD and SET charge detector will be simulated under certain parameter values using SIMON 2.0 software. From simulation based on our proposed circuit, we found that the existence of an electron can be controlled by giving the gate voltage of 200µV. Gate is separate from QD by a capacitor of 500 aF. The existence of electron in the QD is detected by the SET charge detector with presence of current at the source.

Abstrak :
Electrons in a single electron transistor (SET) are transported one by one from source to drain based on the coulomb blockade mechanism. The transport rate is sensitively influenced by the presence of event a single electron charge located near the quantum dot. Based on this characteristic, we propose a Double Quantum Dot (DQD) SET to manipulate the presence of an electron in Quantum Dot (QD) as an implementation of a single-electron logic concept. The existence of an electron in the QD is used to represent logic 0 (no electron in QD) or logic 1 (an electron in QD). The logic states are sensed by a SET charge detector. Design of circuit based on DQD and SET charge detector are simulated by using SIMON 2.0 software. From the simulation, we have successfully developed a two-bit logic circuit by controlling the presence of an electron in DQD. We found that the existence of an electron in QD can be controlled by application of a gate voltage larger than 190µV. Gate should be separated from QD by a non-tunnel capacitor of 500 aF. No larger than 1 aF of interdot tunnel capacitance is required to isolate the QD from one to another. The existence of an electron in QD is successfully detected by SET based charge detector.