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"In spite of abundant experimental evidences supporting the viability of the laser induced shock wave plasma model for the explanation of the important features ofthe plasma and the associated spectroscopic characteristics, a controversy on the atomic excitation mechanism in the plasma has remained to be completely resolved. In this study the contributions of the shock wave model and two other most popular models, the electron-ion recombination model and thc electron collision model were thoroughly investigated. For that purpose, a special technique has been developed for the direct detection of the charge current in conjunction with plasma emission measurement dining the laser plasma generation and expansion. The current detection was performed by placing a partially transmitting metal mesh electrode at a distance in front of the sample surface with the sample target sewing as the counter electrode. The electric Held between the mesh and sample surface was set up and varied by applying a variable DC voltage (0-400 Volt) between them. The laser plasma was generated by a YAG laser (64 ml, 8 ns) tightly focused on a Cu target through the mesh electrode in low-pressure surrounding gas. It was found that the charge current time profiles obtained at various gas pressures invariably exhibit a lack of consistent correlation with the emission time profile of the plasma throughout most of the emission period. The result of this study has thus practically eliminated any significant roles ofthe electron-ion recombination and electron collision models in the excitation process. We are therefore led to conclude that the shock wave model proposed earlier is most plausible for the consistent explanation of the secondary plasma emission, while the other two models may have some contribution only at the very initial stage ofthe secondary plasma generation."

"ABSTRACTIn spite of abundant experimental evidences supporting the viability of the laserinduced shock wave plasma model for the explanation of the important features oftheplasma and the associated spectroscopic characteristics, a controversy on the atomicexcitation mechanism in the plasma has remained to be completely resolved. In thisstudy the contributions of the shock wave model and two other most popular models,the electron-ion recombination model and thc electron collision model werethoroughly investigated. For that purpose, a special technique has been developed forthe direct detection of the charge current in conjunction with plasma emissionmeasurement dining the laser plasma generation and expansion. The current detectionwas performed by placing a partially transmitting metal mesh electrode at a distancein front of the sample surface with the sample target sewing as the counter electrode.The electric Held between the mesh and sample surface was set up and varied byapplying a variable DC voltage (0-400 Volt) between them. The laser plasma wasgenerated by a YAG laser (64 ml, 8 ns) tightly focused on a Cu target through themesh electrode in low-pressure surrounding gas. It was found that the charge currenttime profiles obtained at various gas pressures invariably exhibit a lack of consistentcorrelation with the emission time profile of the plasma throughout most of theemission period. The result of this study has thus practically eliminated anysignificant roles ofthe electron-ion recombination and electron collision models in theexcitation process. We are therefore led to conclude that the shock wave modelproposed earlier is most plausible for the consistent explanation of the secondaryplasma emission, while the other two models may have some contribution only at thevery initial stage ofthe secondary plasma generation.Key words: charge current, shock wave, electron-ion recombination and electroncollision.Praiseci is to the Lord for He is my reason in everything I do.This manuscript is never be done without the guidance by Pro£ Tjia May On, towhom I am extremely grateful. He also provided the support without which this thesiswould not possible. He is more than just a teacher for me for his words have deeplytouched me. Moreover, he also introduced me that knowledge is something we shouldshare among others and to improve the education in my country.I am also indebted to Prof. Kiichiro Kagawa at the Fukui University for providingthe atmosphere and the physical resources to make thesis writing in these times of fastpaced research. I am also thankful for the opportunity which is given to me to joinresearch together with him in his laboratory in Japan.Extra special thanks go to Dr. Hendrik Kurniawan for providing me withencouragement and support for this project. He is the first one who encouraged me totake Doctor Cotuse Program which seemed impossible at the beginning. Hiscompanion during research at Applied Spectroscopy Laboratory at University ofIndonesia is a leading experience in research for me.I am particularly grateful to the excellent team of referees who provided criticalcomments on this thesis. Their feedback was a great benefit to me.I gratefully acknowledge all my colleagues: Rinda Hedwig, Mangasi A.Marpaung, Hery Suyanto, MM. Suliyanti, Wahyu S. Budi, and Emon in AppliedSpectroscopy Laboratory at University of Indonesia, for their assistance and supportduring my study.My never-ending thanks to my beloved family, especially to my parents whoexhibited thoughtful patience over extended periods of time when I seemed to beinvisible. Thanks also to Loviana who helped me in all situations which I no longercan resist by myselflFinally, I apologize to all those who helped that I did not acknowledge specifically.I know there were many and greatly appreciate your assistance.August, 2002Author"

"Dalam penelitian ini telah berhasil dilakukan pembuatan thin film Zn excimer pada substrat Safir (α-Al2O3) dengan teknik rekombinasi ion pada sistem electron assisted PVD. Modifikasi level elektronik pada Zn dengan eksitasi memungkinkan untuk mendapatkan struktur kristal yang berbeda dan akan merubah sifat material. Salah satu variabel utama dalam kontrol pembentukan Zn excimer dengan metode rekombinasi ion adalah kontrol energi insiden elektron. Kontrol energi tersebut berkaitan dengan fenomena densitas elektron yang ditembakkan ke substrat. Distribusi densitas muatan elektron tersebut tergantung pada posisi substrat sehingga akan berpengaruh pada pembentukan lapisan film Zn excimer. Sampel lapisan film tersebut dikarakterisasi dengan pengujian seperti X-ray Photoelectron Spectroscopy (XPS) pada lokasi sampel yang berbeda. Karakterisasi dengan XPS akan membantu untuk memahami pengaruh densitas muatan elektron terhadap lapisan film Zn excimer.

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In this study have been successfully performed the manufacture of thin film Zn * on a substrate Sapphire (α-Al2O3) by ion recombination techniques in electronassisted PVD system. Modifications electronic level in Zn with excitation makes it possible to get different crystal structure and properties. The main variable for control formation of Zn excimer is the energy incident electron. These related to the phenomenon of electron density that irradiated into the substrate. Electron charge density distribution depends on the position of the substrate that will affect the formation of thin film Zn excimer. The samples were characterized by X-ray photoelectron spectroscopy (XPS) at different sample locations. Characterization by XPS will help to understand the influence of the electron charge density of the thin film Zn excimer."

"ABSTRAKTesis ini membahas mengenai faktor koreksi rekombinasi ion untuk bilik ionisasi pada berkas foton FFF Flattening-Filter-Free kemudian membandingkan hasilnya dengan berkas foton konvensional. Evaluasi faktor koreksi rekombinasi ion dilakukan untuk bilik ionisasi FC65-G, SNC600c dan CC13. Pengukuran menggunakan ketiga bilik ionisasi dilakukan di dalam fantom air dan menggunakan foton FFF dan foton konvensional 6 MV dari pesawat Varian Trilogy. Nilai faktor koreksi rekombinasi ion untuk ketiga bilik ionisasi kemudian diperoleh dari perhitungan dengan menggunakan metode dua tegangan sederhana dan fitting kurva Jaffe plot. Pengukuran juga dilakukan untuk beberapa variasi kedalaman dan variasi ukuran lapangan. Nilai faktor rekombinasi ion yang diperoleh secara keseluruhan dari ketiga bilik ionisasi menunjukkan bahwa nilai koreksi pada berkas foton FFF memilliki nilai yang lebih besar dibandingkan berkas foton konvemsional dengan perbedaan < 0,5 . Sementara dengan menggunakan beberapa variasi kedalaman dan ukuran, diketahui bahwa nilai koreksi rekombinasi ion berkurang dengan bertambahnya kedalaman variasi < 0,3 dan meningkat dengan bertambahnya ukuran lapangan variasi < 0,1 . Nilai koreksi rekombinasi ion yang diperoleh dari fitting kurva Jaffe plot linier memiliki perbedaan sebesar le; 7,649 bila dibandingkan dengan metode dua tegangan. Sementara perbedaan nilai koreksi rekombinasi ion yang diperoleh dari fitting kurva kuadratik dan fitting kurva kuadratik eksponensial terhadap metode dua tegangan adalah sebesar le; 0,5882 dan le; 1,798 . Selain koreksi rekombinasi ion, pada penelitian ini juga dilakukan evaluasi terhadap nilik faktor koreksi polaritas pada berkas foton FFF. Nilai koreksi polaritas berkas foton FFF dengan berkas foton konvensional memiliki perbedaan sebesar < 0,15 .. Nilai koreksi rekombinasi ion maupun koreksi polaritas untuk ketiga bilik ionisasi tidak memiliki perbedaan yang dignifikan bila dibandingan antara berkas foton konvensional dengan foton FFF.

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ABSTRACT

This study focused on ion recombination factor for ionization chambers in FFF flattening filter free photon beams and then compared the result against conventional photon beams. The evaluation of ion recombination correction factor was performed using FC65 G, SNC600c, and CC13 ionization chambers. Measurements using the three ionization chambers were performed within the water fantom and using 6 MV FFF and conventional photon beams from the Varian Trilogy linac. The ion recombination correction factor value for the three ionization chambers were obtained from the calculation using the simple two voltage method and Jaffe plot curve fitting. Measurements were also performed for several depth and field size variations. The ion recombination factor value obtained from all three ionization chambers were higher for FFF photon beams than for the conventional photon beams with a difference of 0.5 . While using several variations of depth and size, the results showed that the ion recombination correction value decreased with increasing depth with variation 0.3 and increased with increasing field size with variation 0.1 . The ion recombination correction value obtained from the linear Jaffe plot curve fitting had a difference le 7.649 when compared to the two voltage method. While differences in ion recombination correction values obtained from quadratic curve fitting and exponential quadratic curve fitting to two voltage methods were le 0.5882 and le 1.798 . In addition to ion recombination correction, this study also evaluated the polarity correction factor in the FFF photon beams. The polarity correction value of FFF photon beam with conventional photon beam had a difference 0.15 . The value of ion recombination and polarity correction for the three ionization chambers in FFF photon beams has no significant difference compared to conventional photon beams."