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Abstrak :
ABSTRAK
Telah berhasil dilakukan sintesis semikonduktor Cu2ZnSnS4 (CZTS) sebagai absorber sel surya lapis tipis menggunakan metode yang ekonomis dan ramah lingkungan menggunakan sistem prekursor baru basis pelarut etanol. Dipelajari pengaruh penggunaan ethanolamine (ETA) dan 2-mercaptopropionic acid (MPA) sebagai stabilisator dan untuk menurunkan tegangan permukaan prekursor pada proses deposisi. Prekursor CZTS dilakukan deposisi diatas kaca soda lime pada nilai konsentrasi yang berbeda. Pengaruh sistem prekursor yang digunakan, etanol-ETA-MPA dan etanol-MPA, terhadap struktur, morfologi, komposisi dan sifat optik lapis semikonduktor CZTS dibahas detail. Analisis uji X-ray diffraction dan energy dispersive spectroscopy menunjukkan fasa kesterite CZTS dengan kristalinitas yang tinggi. Kristalinitas CZTS meningkat seiring dengan meningkatnya molaritas prekursor etanol-MPA. Fenomena tersebut berjalan liniar sebelum mencapai nilai molaritas prekursor 2.2 molar. Sedangakn eksperimen menggunakan prekursor etanol-ETA-MPA 1.2 molar dan 1.6 molar tidak menunjukkan kenaikan kristalinitas yang signifikan. Kristalinitas CZTS tertinggi didapat menggunakan prekursor etanol-MPA 2 molar dengan nilai energi celah pita 1.3 eV. Hasil rekam morfologi permukaan CZTS menggunakan SEM menunjukkan bahwa senyawa CZTS terbentuk dengan besar butir sekitar 1.5 mikrometer dan beberapa porositas yang dapat diminimalisir melalui optimalisasi sistem prekursor dan perlakuan termal. Hasil studi pada penelitian ini dapat berperan dalam menurunkan biaya produksi semikonduktor CZTS dengan sifat kristalinitas tinggi.

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ABSTRACT
Hereby, we present a new, cost-effective and environmentally friendly method of preparing a high crystalline Cu2ZnSnS4 (CZTS) absorber layer for thin film solar cells using ethanol-based solutions. Ethanolamine (ETA) and 2-mercaptopropionic acid (MPA) were studied as stabilizer and to improve wetting ability of the precursors during deposition process. Cu2ZnSnS4 precursors is deposited onto soda lime glass using spin coater in different molar of kations in the precursors. The effects of the precursor system, ethanol-ETA-MPA and ethanol-MPA, on the structure, morphology, composition and optical properties of CZTS thin films have been investigated in details. X-ray diffraction and energy-dispersive X-ray spectroscopy analyses confirmed the succesful fabrication of high crystalline Cu2ZnSnS4 kesterite phase. The crystallinity of CZTS in continue increasing before reaching 2.2 molar kations of the ethanol-MPA precursors. The crystallinity of ethanol-ETA-MPA precursors remain similar in the experiment using 1.2 molar and 1.6 molar. The highest crystallinity was achievedusing 2 molar kations of the precursors ethanol-MPA. Its band gap energy is found to be around 1.3 Ev. The SEM micrographs of CZTS film shows the average grain size around 1.5 micrometer and some porosity which indicated the room of improvement. The high-crystallinity CZTS achieved in the present study brings a low-cost absorber semiconductor one step closer to practical use.

Abstrak :
ABSTRAK
Telah berhasil dilakukan sintesis semikonduktor Cu2ZnSnS4 CZTS sebagai absorber semikonduktor yang dilakukan dengan metode kimiawi menggunakan pelarut dan ligand etanolamine untuk memudahkan reaksi dengan sulfur. Deposisi CZTS yang dipilih adalah menggunakan metode dip-coating. Metode ini dilakukan diatas substrat kaca soda lime glass yang kemudian di drying pada 200 C dan annealing pada 550 C dengan atmosfir argon. Kristalinitas CZTS hasil uji X-ray diffraction yang tinggi serta hasil energy dispersive spectroscopy yang sesuai dengan literatur. Celah pita yang didapatkan pada CZTS adalah 1,36 eV.Lapis CZTS kemudian dilapisi dengan Cadmium Sulfide CdS dengan metode chemical bath deposition menggunakan perbedaan konsentrasi [S]:[Cd] dan temperatur deposisi yang berbeda. Lapisan CdS diuji pola difraksinya menggunakan X-ray diffraction dan UV-Vis spectroscopy. Kristalinitas meningkat pada setiap penambahan konsentrasi [S]:[Cd] dengan pola diffraksi yang paling mirip dengan referensi adalah perbandingan 5 dan semua sampel memiliki rata-rata celah pita 2,26 eV. Meningkatnya temperatur pada CdS dapat merubah antarmuka antara CZTS dengan CdS dimana pada temperatur 70 C menunjukan interface yang paling baik dengan ditemukannya adanya Antarfasa antara CZTS dan CdS. Hasil optik dari CZTS/CdS menunjukan perbandingan konsentrasi [S]:[Cd]= 5 dapat meningkatkan performa absorbsi dari CZTS. Antarmuka pada temperatur selain 90 C diduga dapat meningkatkan sifat reflektansi dari lapisan CdS yang menurunkan transmitansi

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ABSTRACT
The semiconductor synthesis of Cu2ZnSnS4 CZTS has been successfully carried as a semiconductor absorber by chemical method using solvents and ethanolamine ligand. The dip coating method has been selected for CZTS deposition. This method carried out on a soda lime glass substrate, then dried at 200 C and annealed at 550 C with an argon atmosphere. X ray diffraction test and electron dispersive spectroscopy analysis confirm the crystallinity and chemcial composition of CZTS. The bandgap obtained in CZTS is 1.36 eV. The CZTS layer is then coated with CdS by chemical bath deposition method using different concentration S Cd and different deposition temperature. The CdS layer diffraction pattern and optical properties are checked using X ray diffraction and UV Vis spectroscopy. It was shown that crystallinity increased at each addition of S Cd concentration with the diffraction patterns confirm that CdS are present at the ratio of 5 and all samples had an average bandgap 2.26 eV. Increased temperatures in CdS can alter the interface between CZTS and CdS where at 70 C it shows the best interface with the discovery of an interphase between CZTS and CdS. Optical results from CZTS CdS showed a concentration ratio of 5 to improve the absorption performance of CZTS. Interfaces at temperatures other than 90 C are thought to increase the reflectance properties of the CdS layer that inhibit the transmittance properties of CdS.

Abstrak :
Sintesis senyawa Cu2ZnSnS4 menggunakan pelarut etanol memiliki keunggulan dari harga yang relatif murah dan ramah lingkungan. Pada penelitian ini, diamati pengaruh perbedaan substrat soda lime glass dan mo-coated glass terhadap kristalinitas, morfologi, sifat listrik dan sifat optik lapisan tipis Cu2ZnSnS4 hasil deposisi menggunakan metode dip coating dengan pelarut etanol. Hasil uji XRD menunjukkan substrat soda lime glass memiliki kristalinitas lebih tinggi dibanding substrat mo-coated glass. Morfologi lapisan menunjukan terjadinya keretakan pada kedua sampel dan beberapa rongga yang dapat diminimalisir dengan optimalisasi sistem prekursor dan perlakuan termal yang diberikan. Substrat mo-coated glass dapat menurunkan nilai resistivitas pada lapisan tipis Cu2ZnSnS4. Nilai energi celah pita untuk kedua sampel didapatkan sekitar 2,2 eV yang kurang sesuai dikarenakan kehadiran fasa sekunder yang cukup tinggi. ...... The synthesis of Cu2ZnSnS4 compounds using ethanol solvents has the advantage of a relatively cheap and environmentally friendly. In this study, we observed the effect of soda lime glass substrate and molybdenum coated glass substrate the crystallinity, morphology, electrical properties and optical properties of Cu2ZnSnS4 by dip coating with ethanol solvent. The XRD test results showed that the soda lime glass substrate has higher crystallinity than the molybdenum coated glass substrate. The morphology of the coating indicates the presence of cracks in both samples and some cavities that can be minimized by optimizing the precursor system and the thermal treatment. The molybdenum coated glass substrate can decrease the resistivity in the Cu2ZnSnS4 thin film. The band gap energy for both samples was found to be about 2.2 eV which was less suitable due to the presence of a fairly high secondary phase.

Abstrak :
The growth and crystallization processes of the Cu2ZnSnS4 (CZTS) phase typically rely on high-temperature sulfurization, which involves a harmful chalcogen-containing atmosphere. Together with the use of high-toxicity solvents, these processes could hinder the widespread adoption of this technology in the mass production of CZTS semiconductors for solar cell application. Thus, we studied the formation of CZTS films from ethanol-based precursors without the sulfurization step, fully employing the non-toxic solvent and avoiding the environmentally harmful sulfur-containing atmosphere. The certain addition of 2-mercaptopropionic acid led to the formation of a clear and stable sulfur-containing precursor. The precursors were successfully deposited onto soda lime glass by employing spin coater. CZTS crystallinity in the identified XRD patterns was vanishingly small in the case of eliminating the sulfurization process. Moreover, the carbon concentration and grain size of the resulting films were controlled by changing the time period of drying treatment during film fabrication. A drying time of 120 minutes, which demonstrated a CZTS grain size of ± 1 µm with a direct optical energy gap around 1.4 eV, was confirmed as the ideal condition. These results may provide a useful route toward environment-friendly strategies for the production of a CZTS semiconductor that is compatible with the absorber application in thin-film solar cells.

Abstrak :
The growth and crystallization processes of the Cu2ZnSnS4 (CZTS) phase typically rely on high-temperature sulfurization, which involves a harmful chalcogen-containing atmosphere. Together with the use of high-toxicity solvents, these processes could hinder the widespread adoption of this technology in the mass production of CZTS semiconductors for solar cell application. Thus, we studied the formation of CZTS films from ethanol-based precursors without the sulfurization step, fully employing the non-toxic solvent and avoiding the environmentally harmful sulfur-containing atmosphere. The certain addition of 2-mercaptopropionic acid led to the formation of a clear and stable sulfur-containing precursor. The precursors were successfully deposited onto soda lime glass by employing spin coater. CZTS crystallinity in the identified XRD patterns was vanishingly small in the case of eliminating the sulfurization process. Moreover, the carbon concentration and grain size of the resulting films were controlled by changing the time period of drying treatment during film fabrication. A drying time of 120 minutes, which demonstrated a CZTS grain size of ± 1 µm with a direct optical energy gap around 1.4 eV, was confirmed as the ideal condition. These results may provide a useful route toward environment-friendly strategies for the production of a CZTS semiconductor that is compatible with the absorber application in thin-film solar cells.