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Abstrak :
Elektron dapat dipindahkan satu persatu dalam konsep Single Electron Transistor (SET). Salah satu keunggulan SET adalah kemampuannya untuk mendeteksi adanya muatan yang sangat kecil. Dalam konsep quantum computing, pendeteksian ini diperlukan untuk menentukan kondisi dari suatu Quantum Dot (QD), apakah dalam kondisi logika 0 (tidak ada elektron) atau 1 (ada elektron). Pada riset ini, desain Double Quantum Dot (DQD) akan diteliti agar dapat mengontrol keberadaan elektron dalam suatu dot sebagai implementasi konsep quantum computing. Selanjutnya, desain SET charge detector akan ditambahkan untuk mendeteksi keberadaan elektron tersebut. Desain DQD dan SET charge detector akan disimulasikan dengan nilai parameter tertentu menggunakan software SIMON 2.0. Dari simulasi menggunakan rangkaian yang didesain, didapatkan bahwa keberadaan sebuah elektron dapat dikontrol dengan pemberian tegangan gate sebesar 200 µV. Antara gate dan QD dipisahkan oleh kapasitor sebesar 500 aF. Keberadaan elektron pada QD dideteksi oleh SET charge detector dengan terjadinya arus pada source. ......Electrons can be moved one by one in the concept of Single Electron Transistor (SET). One of the advantages of SET is its ability to detect the presence of a very small charge. In quantum computing concept, the detection is required to sense the condition of a Quantum Dot (QD), does the logic states 0 (there is no an electron) or 1 (there is an electron). In this research, design of a Double Quantum Dot (DQD) will be examined in order to manipulate the presence of electron in a QD as the implementation of quantum computing concept. Furthermore, design of a SET charge detector will be added to detect the presence of the electron. Design of DQD and SET charge detector will be simulated under certain parameter values using SIMON 2.0 software. From simulation based on our proposed circuit, we found that the existence of an electron can be controlled by giving the gate voltage of 200µV. Gate is separate from QD by a capacitor of 500 aF. The existence of electron in the QD is detected by the SET charge detector with presence of current at the source.

Abstrak :
Electrons in a single electron transistor (SET) are transported one by one from source to drain based on the coulomb blockade mechanism. The transport rate is sensitively influenced by the presence of event a single electron charge located near the quantum dot. Based on this characteristic, we propose a Double Quantum Dot (DQD) SET to manipulate the presence of an electron in Quantum Dot (QD) as an implementation of a single-electron logic concept. The existence of an electron in the QD is used to represent logic 0 (no electron in QD) or logic 1 (an electron in QD). The logic states are sensed by a SET charge detector. Design of circuit based on DQD and SET charge detector are simulated by using SIMON 2.0 software. From the simulation, we have successfully developed a two-bit logic circuit by controlling the presence of an electron in DQD. We found that the existence of an electron in QD can be controlled by application of a gate voltage larger than 190µV. Gate should be separated from QD by a non-tunnel capacitor of 500 aF. No larger than 1 aF of interdot tunnel capacitance is required to isolate the QD from one to another. The existence of an electron in QD is successfully detected by SET based charge detector.