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"ABSTRAKSuatu peninjauan akan dilakukan terhadap divais semikonductor dengan empat terminal yang disebut metal oxide semiconductor bipolar junction transistor (MOSBJT). Dalam divais ini karakteristik listriknya berdasarkan gabungan dua prinsip yaitu; prinsip metal oxide semiconductor (MOS) atau field effect transistor (FET) dan prinsip bipolar junction transistor (BJT). Pada keadaan forward active, struktur permukaan MOS bersifat terbalik (inverted) dan kontak listrik yang terdifusi (diffused electrical contact), drain, memberikan suatu mekanisme untuk reverse bias lapisan inversion terhadap base. Pembawa minoritas yang diinjeksikan ke base, berdifusi sepanjang base, dikumpulkan pada permukaan yang inverted dan selanjutnya mengalir ke terminal drain. Resistansi lapisan inversion menyebabkan suatu voltage drop sepanjang lapisan inversion dan akan mengurangi reverse bias dari inversion-layer/base junction. Voltage drop ini dapat mengurangi/membalik bias dari inversion-layer/base junction yang letaknya paling jauh dari kontak drain. Pengurangan/pembalikan bias ini akan mengurangi daerah active collector untuk mengumpulkan arus drain. Karena resistansi lapisan inversion tergantung dari tegangan gate dan base bias, maka kedua terminal kontrol (gate dan base) tersebut mempunyai pengaruh yang besar terhadap sifat listrik dari divais.Berdasarkan prinsip dasar Hall effect dan magnetoresistance, pengaruh medan magnet terhadap divais ternyata mendominasi pengurangan/pembalikan bias dari inversion-layer/base junction, mempertahankan daerah active dan menyebabkan suatu penurunan besarnya resistansi lapisan inversion.Empat set model divais untuk sensor medan magnet telah difabrikasi dengan bentuk geometri gate, yaitu; Large-L shape, Medium-L shape, Small-L shape dan T shape. Divais tersebut difabrikasi secara bersama, memakai suatu prosedur yang didisain untuk mengoptimalkan keandalan kedua komponen, FET dan BJT, dari MOSBJT.Suatu kenaikan yang sangat berarti terjadi pada arus collector, telah diobservasi, selama divais dipengaruhi oleh medan magnet dengan tiga arah yang saling tegak lurus. Pengaruh ini berkaitan dengan resistansi lapisan inversion yang menyebabkan bertambahnya daerah active MOSBJT dalam keadaan forward active MOSBJT pada harga gate bias tertentu. Besarnya magnetosensitivity dari divais yang difabrikasi adalah; a) absolute magnetosensitivies S'As, besarnya antara 0.002 µA/G dan 0.200 µA/G, serta b) relative magnetosensitivies S'Rs, besarnya antara 0.03 %/G dan 15.67 %/G. Besarnya magnetosensitivity tersebut di atas merupakan keunggulan (excellent achievements) dari divais yang difabrikasi."

"The book discusses active devices and circuits for microwave communications. It begins with the basics of device physics and then explores the design of microwave communication systems including analysis and the implementation of different circuits. In addition to classic topics in microwave active devices, such as p-i-n diodes, Schottky diodes, step recovery diodes, BJT, HBT, MESFET, HFET, and various microwave circuits like switch, phase shifter, attenuator, detector, amplifier, multiplier and mixer, the book also covers modern areas such as Class-F power amplifiers, direct frequency modulators, linearizers, and equalizers. Most of the examples are based on practical devices available in commercial markets and the circuits presented are operational. The book uses analytical methods to derive values of circuit components without the need for any circuit design tools, in order to explain the theory of the circuits. All the given analytical expressions are also cross verified using commercially available microwave circuit design tools, and each chapter includes relevant diagrams and solved problems. It is intended for scholars in the field of electronics and communication engineering."

"This textbook provides an in-depth treatment of the physics of power semiconductor devices that are commonly used by the power electronics industry. Drawing upon decades of industry and teaching experience and using numerous examples and illustrative applications, the author discusses in detail the various device performance attributes that allow practicing engineers to develop energy-efficient products. Coverage includes all types of power rectifiers and transistors and analytical models for explaining the operation of all power semiconductor devices are developed and demonstrated in each section of the book. Throughout the book, emphasis is placed on deriving simple analytical expressions that describe the underlying physics and enable representation of the device electrical characteristics. This treatment is invaluable for teaching a course on power devices because it allows the operating principles and concepts to be conveyed with quantitative analysis. The treatment focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. This new edition also includes a chapter on the impact of power semiconductor devices on energy savings and reduction of carbon emissions."