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"Studi karakterisasi optis lapisan tipis amorf silikon karbon hasil metode deposisi glowdischarge dilakukan dengan menggunakan spektroskopi ultra violet-visible (uv-vis). Indeks bias n dihitung dengan formula Swanepoel menggunakan spektrum transmitansi kemudian dilanjutkan dengan simulasi numerik. Densitas lapisan tipis a-SiC:H cenderung berkurang dengan bertambahnya komposisi karbon. Peningkatan lebar gap optis dengan bertambahnya komposisi karbon memperlihatkan peningkatan transparansi lapisan tipis a-SiC:H. Baik bagian riil maupun imajiner fungsi dielektrik memperlihatkan harga yang cenderung berkurang dengan peningkatan komposisi karbon.

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Optical Properties of a-SiC:H Films Deposited by Glowdischarge Methods. The optical properties of amorphous silicon carbon films deposited by glowdischarge method have been studied using ultra violet-visible (uv-vis) spectroscopy. The refractive index was calculated by Swanepoel?s formula using transmission data then followed by numerical simulation. The films density tends to decrease with increasing carbon content. The widening of the optical gap by increasing carbon content indicates the enhancement of film?s transparence. Both real and imaginary parts of the dielectric constant show variation in magnitude as the carbon content increase."

"Pengaruh perlakuan anil termal terhadap besaran optis lapisan tipis amorf silikon karbon yang dideposisi menggunakan target silikon dalam campuran gas argon, metan dan hidrogen dipelajari dengan menggunakan spektroskopi ultra violet-visible (uv-vis). Baik n maupun α, demikianpula bagian riil dan imajiner fungsi dielektrik cukup bervariasi terhadap peningkatan temperatur anil sampai 500 °C, dengan perubahan terbesar terjadi pada temperatur anil 300 °C. Lapisan tipis cenderung meningkat densitasnya dengan peningkatan temperatur anil sampai 500 °C. Gap optis memperlihatkan sedikit peningkatan dengan pemberian perlakuan anil sedangkan disorder jaringan amorf berkurang. Pemberian perlakuan anil menghasilkan pengaturan kembali jaringan amorf yang disebabkan terjadinya pemutusan ikatan hidrogen (Si-H dan C-H).

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The Effect of Thermal Annealing on the Optical Properties of a-SiC:H Films Produced by DC Sputtering Methods: I. Silicon Target Case. The effects of thermal annealing treatment on the optical properties of amorphous silicon carbon films deposited by silicon target in an argon, methane and hydrogen gas mixture have been studied using ultra violet-visible (uv-vis) spectroscopy. Both n and α, and consequently the real and imaginary parts of the dielectric constant, show a considerable variation with subsequent annealing up to annealing temperature 500 °C, with the most rapid changes occurring for temperature 300 °C. The films tend denser as the annealing temperature increased up to 500 °C. The optical gap improved slightly upon annealing, where as the disorder of the amorphous network reduced. The annealing treatment produces reorganization of the amorphous network since thermal annealing results in dissociation of hydrogenated bonds (Si-H and C-H)."

"Studi tentang pengaruh anil termal terhadap besaran optis dan disorder lapisan tipis amorf silikon karbon terhidrogenasi (a-SiC:H) telah dilakukan. Lapisan tipis dihasilkan dengan teknik deposisi sputtering menggunakan target grafit dan wafer silikon yang dilakukan dalam campuran gas argon dan hidrogen, kemudian dikarakterisasi dengan spektroskopi uv-vis (ultra violet-visible) sebelum dan setelah diberikan perlakuan anil termal. Indeks bias n dan koefisien absorpsi α diperoleh dari hasil pengukuran transmitansi. Gap optis memperlihatkan sedikit variasi terhadap temperatur anil, yakni meningkat dengan bertambahnya temperatur anil sampai 500 °C. Kenaikan temperatur anil menyebabkan densitas lapisan tipis berkurang dan demikianpula disorder jaringan amorfnya. Hasil eksperimen akan didiskusikan dalam hubungannya dengan kondisi deposisi dan hasil eksperimen lain.

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The Effect of Thermal Annealing on the Optical Properties of a-SiC:H Films Produced by DC Sputtering Methods: I. Graphite Target Case. A study of the annealing effect on optical properties and disorder of hydrogenated amorphous silicon carbon (a-SiC:H) films was undertaken. The films were prepared by sputtering technique using graphite target and silicon wafer in argon and hydrogen gas mixture, and then characterized by uv-vis (ultra violet-visible) spectroscopy before and after annealing. Index of refraction n and absorption coefficient α of films have been determined from measurements of transmittance. The optical gap show small variation with annealing temperature, increasing with increasing annealing temperature up to 500 °C. An increase of annealing temperature leads to reduced film density and the amorphous network disorder. The experimental results are discussed in terms of deposition condition and compared to other experimental results."

"Lapisan tipis amorf silikon karbon terhidrogenasi telah dibuat dengan metode depasisi DCRMS (dc magnetron sputtering). Spektrum inframerah lapisan tipis amorf silikon karbon yang dihasilkan pada penelitian ini memiliki tiga daerah absorpsi yang terletak di sekitar 600-900 cm2, 1900-2200 cm2 dan 2800-3000 cm2. Mode-mode vibrasi struktur ikatan yang terdapat pada lapisan tipis meliputi mode vibrasi wagging Si-H di sekitar 640 cm-1; doublet mode vibrasi bending Si-H2 di sekitar 850 dan 890 cm-1; doublet mode vibrasi stretching Si-H di sekitar 2000 dan 2100 cm'1; mode vibrasi stretching Si-C di sekitar 720 dan 780 cm-1; mode vibrasi stretching C-H di sekitar 2800 cm-1. Peningkatan flowrate gas metan menggeser posisi mode-mode vibrasi ke bilangan gelombang yang lebih tinggi dan meningkatkan integral absorpsi dari mode-mode vibrasi tersebut. Pengaruh peningkatan flowrate gas metan terhadap mode vibrasi di sekitar 2000 dan 2100 cm./ menyebabkan terjadinya transisi dari 2000 ke 2100 cm-1 yang disebabkan oleh peningkatan hidrogen bukan karena peningkatan konsentrasi karbon.Hasil evolusi dan implantasi hidrogen menunjukkan kehadiran void di dalam lapisan tipis. Kuat absorpsi mode vibrasi stretching dan wagging Si-H tidak bergantung pada flowrate gas metan. Harga kuat absorpsi mode vibrasi stretching Si-H di sekitar 2000 dan 2100 cm.' tidak jauh berbeda. Mode vibrasi di sekitar 720 dan 780 cm'1 diperkirakan merupakan hasil kopling mode vibrasi wagging Si-H dan mode vibrasi stretching Si-C. Mode vibrasi di sekitar 720 cm-1 merupakan mode vibrasi stretching Si-C yang melibatkan hidrogen sedangkan mode vibrasi di sekitar 780 cm"' tanpa hidrogen. Kedua mode vibrasi ini mewakili mode vibrasi stretching Si-C bukan hanya salah satu dari keduanya. Struktur ikatan silikon dengan karbon dominan berada dalam gugus H-Si-C pada flowrate gas metan rendah. Atom hidrogen pada lapisan tipis hanya berikatan dengan satu atom karbon saja. Atom hidrogen cenderung berikatan dengan atom silikon dibandingkan dengan atom karbon. Selain peningkatan konsentrasi karbon, peningkatan hidrogen juga berpengaruh terhadap berkurangnya indeks bias rill dan peningkatan gap optis. Struktur ikatan hidrogen yang berpengaruh terhadap berkurangnya indeks bias dan bertambahnya gap optis adalah struktur ikatan hidrogen di void.

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Infrared Spectroscopy and Optical Properties of Amorphous Silicon Carbon Films (a-Six_x C1:H) Produced by DC Magnetron Sputtering MethodsHydrogenated Amorphous Silicon Carbon films were prepared by dc reactive magnetron sputtering (DCRMS) methods. The infrared spectra have three absorption regions at 600-900 cm 1, 1900-2200 cm-1 and 2800-3000 cm-1. These three features shift to higher wavenumber for the methane flowrate increased. The absorption band near 640 cm-1 is assigned to the wagging band of Si-H SiH2 bonds have a bending outlet at 850 and 890 cm-1, the stretching doublet modes of Si-H are around 2000 and 2100 cm-1, the stretching modes of Si-C are near 720 and 780 cm -l and the absorption around 2800 cm-1 is attributed to the C-H stretching mode. The integrated absorption of these modes increases with the methane flowrate. The transition from 2000 to 2100 cm 1 is due to an increasing hydrogen content not carbon concentration.The hydrogen evolution and implantation support the void formation on films. The absorption strength of Si-H stretching and wagging absorption is found to be independent of the methane flowrate. The two Si-H stretching modes around 2000 and 2100 cm'1 have almost the same absorption strength values. The vibrational modes near 720 and 780 cm -1 are presumably as the result of coupling of the Si-C stretching mode with the Si-H wagging mode. The 720 and 780 cm'1 absorption presumably related to H-Si-C groups and unhydrogenated Si-C, respectively. Both 720 and 780 cm-1 absorptions is related to Si-C vibrations. Al low methane flowrate, silicon-carbon bonding structure predominantly in H-Si-C groups. Hydrogen atom is predominantly bound to silicon not to carbon. Roughly one hydrogen atom is incorporated for one carbon atom. The decreasing of the real refractive index and the increasing of the optical gap are not due to carbon concentration alone but also hydrogen concentration. The Si-H bonds covering the inner surfaces of voids have a contribution to decreasing the real refractive index and increasing the optical gap."

"Indeks bias (n) dan koefi sien absorpsi optis (α) lapisan tipis amorf silikon karbon terhidrogenasi (a-SiC:H) telah diteliti dari hasil pengukuran refl eksi dan transmisi. Lapisan tipis a-SiC:H dihasilkan dengan metode deposisi dc sputtering menggunakan target silikon dalam campuran gas argon dan metan. Indeks bias (n) berkurang dengan peningkatan fl ow rate gas metan. Koefi sien absorpsi optis (α) bergeser ke energi yang lebih tinggi dengan bertambahnya fl ow rate gas metan. Lapisan tipis cenderung makin tidak teratur dan memiliki gap optis yang lebih lebar pada fl ow rate gas metan tinggi. Relasi komposisi terhadap sifat?sifat optik lapisan tipis akan didiskusikan demikianpula terhadap ketidakteraturan jaringan amorf.

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Methane Flow Rate Effects On The Optical Properties of Amorphous Silicon Carbon (a-SiC:H) Films Deposited By DC Sputtering Methods. We have investigated the refractive index (n) and the optical absorption coeffi cient (α) from refl ection and transmission measurements on hydrogenated amorphous silicon carbon (a-SiC:H) fi lms. The a-SiC:H fi lms were prepared by dc sputtering method using silicon target in argon and methane gas mixtures. The refractive index (n) decreases as the methane fl ow rate increase. The optical absorption coeffi cient (α) shifts to higher energy with increasing methane fl ow rate. At higher methane fl ow rate, the fi lms tend to be more disorder and have wider optical gap. The relation of the optical properties and the disorder amorphous network with the compositional properties will be discussed."

"Kerapatan keadaan vibrasi lokal dan fungsi korelasi pada beberapa struktur ikatan di dalam silikon karbon amorf (a-Si1-xCx:H) telah hitting dengan menggunakan model potensial Born dan metode "cluster" kisi Bethe. Mode-mode vibrasi lokal yang disebabkan oleh unit monohidrit (SiH dan CH), dihidrit (SiH2 dan CH2), dan trihidrit (SiH3 dan CH3) telah diidentifrkasi. Studi dilakukan pada dua jenis distribusi atom-atom penyusun bahan amorf yaitu "random sequence" dan "chemically ordered". Skema interpolasi digunakan untuk mendiskripsikan probabilitas ikatan dengan rasio percabangan pohon Cayley. Mode-mode vibrasi yang disebabkan keberadaan atom H di dalam pita fonon bulk silikon karbon sangat dipengaruhi oleh jenis atom tetangga terdekat kedua dari atom H. Mode-mode vibrasi yang disebabkan keberadaan atom H di luar pita fonon bulk silikon karbon hampir tidak dipengaruhi oleh jenis atom tetangga terdekat kedua dari atom H Hasil perhitungan yang diperoleh sesuai dengan data-data eksperimen.

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Vibration Local Modes of Amorphous Silicon Carbon (a-Si1-xCx:H): Theoretical Study by Using Cluster Bethe Lattice Methods. Local vibrational density of states and correlation function for various bonding structures in amorphous silicon carbon (a-Si1-xCx:H) have been calculated by employing Born potential models and cluster Bethe lattice method . The local modes induced by the monohydride (SiH and CH), dihydride (SiH2 and CH2), and trihydride (SiH3 and CH3) units are identified The study has been made for two types of distributions of constituent atoms of the alloy: a random sequence and a chemically ordered The interpolation scheme can relate the bonds probabilities to the branching ratios of a Cayley tree. The vibration modes induced by H atoms inside the bulk phonon region of an amorphous silicon carbon (a-Si1-xCx) are influenced very much by the presence of the kind of atoms lying on the next-nearest-neighboring sites of the H atom. On the other hand, the modes induced by H atoms lying outside the bulk phonon region of an amorphous silicon carbon (a-Si1-xCx) are nearly undisturbed by the presence of the kind of atoms lying on the next-nearest neighboring sites of the H atom. The calculated results are in a good agreement with the available experimental data."