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Abstrak :
This textbook provides an in-depth treatment of the physics of power semiconductor devices that are commonly used by the power electronics industry. Drawing upon decades of industry and teaching experience and using numerous examples and illustrative applications, the author discusses in detail the various device performance attributes that allow practicing engineers to develop energy-efficient products. Coverage includes all types of power rectifiers and transistors and analytical models for explaining the operation of all power semiconductor devices are developed and demonstrated in each section of the book. Throughout the book, emphasis is placed on deriving simple analytical expressions that describe the underlying physics and enable representation of the device electrical characteristics. This treatment is invaluable for teaching a course on power devices because it allows the operating principles and concepts to be conveyed with quantitative analysis. The treatment focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. This new edition also includes a chapter on the impact of power semiconductor devices on energy savings and reduction of carbon emissions.

Abstrak :
Dalam skripsi ini dirancang memori 16 bit menggunakan Surface-Channel Charge Coupled Device. SCCD yang digunakan menggunakan substrat Silikon tipe-P dengan konsentrasi dopan sebesar 10's dopanlcm3. Panjang gate CCD sebesar 9 Pm dan jarak antar gate sebesar 1.5 }im. Perpindahan muatan dilakukan secara tiga fasa, Teknik pemasukan sinyal digital yang digunakan adalah voltage input clan teknik pendeteksian yang digunakan floating diffusion amplifier Teknik pengorganisasian memori yang digunakan adalah serpentine multiple loop-random acces yang menggunakan sebuah multiplererdengan addressz bit clan 4 buah loop yang masing-masing terdiri dari dua registerCCD serta dua regenerator. Hasil perhitungan divais menghasilkan waktu yang dibutuhkan untuk mentransfer data secara acak dalam satu register CCD adalah 666.68 ns, jauh lebih kecil da6pada waktu yang dibutuhkan register CCD untuk mencapai kondisi inversi, 0.35875 ms, Perhitungan clan simulasi divais menggunakan software MATLAB 4.0 dari Mathworks & Co.