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Abstrak :
ABSTRAK
Skripsi ini membahas mengenai rancang bangun dari sebuah pembatas arus baterai pada sistem energi terbarukan sel surya. Kapasitas arus pengisian sel surya yang bervariasi ini akan mempengaruhi kondisi pengisian dari baterai. Baik sel surya maupun baterai memiliki nilai arus maksimum yang diizinkan agar tidak merusak komponen tersebut. Oleh karena itu, rangkaian ini didesain untuk melindungi komponen selama proses pengisian baterai. Rangkaian ini menggunakan pembatas arus 2,6 Ampere berbasis transistor dan memiliki dua output berupa aki 12 Volt dan aki 6 Volt. Relay dan komparator digunakan pada rangkaian ini untuk menentukan salah satu output yang akan terhubung dengan sel surya pada suatu kondisi pencahayaan.

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ABSTRACT
This paper focuses on the design of battery current limiter circuit in a renewable energy solar cell system. The charging current varies with the weather and may affect the condition of battery charging. The solar cell and the battery have current maximum rating which is designed in such a way so that it will not damage those components. This design will protect the battery under those circumstances. This circuit uses a 2,6 Ampere current limiter and has a dual output which are a 12 Volt accu and 6 Volt accu. A relay and a comparator will be used in the circuit to connect the solar cell with either output.

Abstrak :
ABSTRACT
Amorphous GaInZnO (GIZO) thin films are grown on Si02/Si substrate by the RF magnetron sputtering method. By the combination of measured band gaps from reflection energy loss spectroscopy (REELS) spectra and valence band from X-ray photo-electron spectroscopy (XPS) spectra, we have demonstrated the energy band alignment of GIZO thin films. The band gap values are 3.2 eV, 3.2 eV, 3.4eV and 3.6eV for the concentration ratios of Ga: In: Zn in GIZO thin films are 1:1:1, 2:2:1, 3:2:1 and 4:2:1, respectively. These are attributed to the larger band gap energy of Ga2O3 compared with In 2O3 and ZnO. The valence band offsets (ΔEv) decrease from 2.18 to 1.68 eV with increasing amount of Ga in GIZO thin films for GIZO1 to GIZO4, respectively. These experimental values of band gap and valence band offset will provide the further understanding in the fundamental properties of GIZO/SiO2/Si heterostructure, which will be useful in the design, modeling and analysis of the performance devices applications.