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Abstrak :
Elektroda konduktor transparan (TCE) adalah bahan lapisan tipis yang memiliki konduktivitas listrik dan sifat transmitansi yang tinggi. Bahan TCE umumnya berupa oksida logam seperti Indium Tin Oxide (ITO). Namun, kelemahan ITO adalah harganya yang relatif mahal dan rapuh, sehingga mendorong pengembangan bahan alternatif lain seperti kawat nano perak (AgNW). Performa tinggi lapisan TCE diperoleh dari transmitansi yang tinggi (lebih dari 85%) dan memiliki nilai resistansi lembaran yang rendah, sedangkan pada umumnya lapisan dengan resistansi lembaran rendah memiliki transmitansi yang rendah. Untuk itu diperlukan upaya untuk mengoptimalkan kedua nilai tersebut. Penelitian ini telah berhasil mensintesis AgNW dengan metode kimia basah dengan panjang rata-rata 10 m dengan diameter rata-rata 46 nm dan diendapkan pada substrat kaca dengan jumlah pelarut etanol 1, 2 dan 3 ml yang bervariasi. Hasil penelitian menunjukkan bahwa lapisan tipis Ag-1 memiliki nilai FoM tertinggi (15,6 sq.Ω-1), karena nilai resistansi lembaran terendah (24 /sq) meskipun transmitansinya paling rendah (72%). Sampel AgNW dengan volume 1 ml etanol (Ag-1) memiliki kerapatan AgNW tertinggi sehingga lebih banyak tersedia jalur untuk dilalui elektron, sehingga memiliki mobilitas yang lebih tinggi meskipun konsentrasi muatannya lebih rendah. ......Transparent conductor electrode (TCE) is a thin layer material that has high electrical conductivity and transmittance properties. TCE materials are generally metal oxides such as Indium Tin Oxide (ITO). However, the weakness of ITO is that it is relatively expensive and brittle, thus encouraging the development of other alternative materials such as silver nanowires (AgNW). The high performance of the TCE coating is obtained from its high transmittance (more than 85%) and has a low sheet resistance value, whereas in general the low sheet resistance coating has a low transmittance. For this reason, efforts are needed to optimize these two values. This research has succeeded in synthesizing AgNW by wet chemical method with an average length of 10 m with an average diameter of 46 nm and deposited on a glass substrate with varying amounts of ethanol 1, 2 and 3 ml of solvent. The results showed that the Ag-1 thin layer had the highest FoM value (15.6 sq.Ω-1), because the sheet resistance value was the lowest (24 /sq) although the transmittance was the lowest (72%). The AgNW sample with a volume of 1 ml of ethanol (Ag-1) has the highest density of AgNW so that there are more available paths for electrons to pass, so it has higher mobility even though the charge concentration is lower.

Abstrak :
Contents : - Testing-Based Failure Analysis: A Critical Component of the SIA Roadmap Vision - Experimental Figures for the Defect Coverage of IDDQVectors - A CAD-Based Approach to Failure Diagnosis of CMOSLSI with Single Fault Using Abnormal IDDQ - Test and Failure Analysis Implications of a Novel Inter-Bit Dependency in a Non- Volatile Memory - Analysis of a Latent Deep Submicron CMOS Device Isolation Leakage Mechanism - Scanning Fluorescent Microthermal Imaging - Temperature Profiling with Highest Spatial and Temperature Resolution by Means of Scanning Thermal Microscopy (SThM) - Thermal and Optical Enhancements to Liquid Crystal Hot Spot Detection Methods - Application of Backside Photo and Thermal Emission Microscopy Techniques to Advanced Memory Devices - A New Chemical Method of Wright Etch in the Delineation of Stacking Faults and Crystalline Defects in Fabrication Silicon Wafer Substrate - Cross Sectioning with a Pivoting Sample Block - Gain Reduction in Silicon Phototransistors Induced by Metallization Mask Misalignment - The Identification of Thermal Fatigue Testing Method of Soldered Joints for Space Use - Comparison Precision XTEM Specimen Preparation Techniques for Semiconductor Failure Analysis - Temperature-Dependent Electronic Circuit Analogy for Predicting Wire Temperature as a Function of Current - The Application of FIB Voltage-Contrast Technique Combining with TEM on Subtle Defect Analysis: Via Delamination After TC - The Usage of Focused Ion Beam Induced Deposition of Gold Film in IC Device Modification and Repair - Failure Analysis Challenges of Surface Micromachined Accelerometers - Failure Analysis for Micro-Electrical-Mechanical Systems (MEMS) - Investigation of Multi-Level Metallization ULSls by Light Emission from the Back- Side and Front-Side of the Chip - A Simple, Cost Effective, and Very Sensitive Alternative for Photon Emission Spectroscopy - Novel Failure Analysis Technique - An Application of Breakthrough Failure Analysis Techniques in Eliminating Silicon Dislocation Problem in Sub-Micron CMOS Devices - Characterization of Californium-252 (252 Cf) as a Laboratory Source of Radiation for Testing and Analysis of Semiconductor Devices - Dendritic Growth Failure of a Mesa Diode - Application of Laser Scanning Microscope to Analyze Forward Voltage Snapback of Compound Semiconductors - Interpretation of Sudden Failures in Pump Laser Diodes - Through-Transmission Acoustic Inspection of Ball Grid Array (BGA) Packages - Moisture Detection Method in Ceramic Package by Slight Current Measurement - Laser Microchemical Technology: New Tools for Flip-Chip Debug and Failure Analysis - Single Contact Electron Beam Induced Current Microscopy for Failure Analysis of Integrated Circuits - Electrical and Chemical Characterization of FIB-Deposited Insulators - IC Design Modification Using Laser Assisted Organometal Deposition - Transmission Electron Microscopy (TEM) Specimen Preparation Technique Using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (Wsix) - Automatic Fault Tracing Using an E-Beam Tester With Reference to a Good Sample - The Business Aspects of Failure Analysis - A Process Induced Failure Mechanism in the EEPROM Cell Its Identification and Solution - Failure Isolation of Mobile Ions Using Secondary Ion Mass Spectroscopy - Detection of Gate Oxide Defects Using Electrochemical Wet Etching in KOH: H20 Solution - Spin-On-Glass (SOG) Contamination Causing Single Via Failure - Use of Failure Analysis Techniques to Optimize the Passivation Process for a TLM 0.35 um Process - Effectiveness of Emission Microscopy in the Failure Analysis of CMOS ASIC Devices - Elimination of Whisker Growth on Tin Plated Electrodes - Characterization of CMOS Structures (0.6 um process) Submitted to HBM and COM ESO Stress Tests - BiCMOS Die Sort Yield Improvement from Isolation of a Localized Defect Mechanism and Precision TEM Cross Section - SEM Equipment Capabilities Evaluated for Sub-Half Micron Semiconductor Applications - Voltage Contrast Application on 1M SRAM Single Bit Failure Analysis - Index

Abstrak :
Contents : - Keynote Presentation - Breakup Sequence of the TWA Flight 800 Airplane: How it was Determined That an Explosion of the Wing Center Section Fuel Tank Initiated the Breakup - Session 1: Advanced Techniques - Micro-Raman Spectroscopy Evaluation of the Local Mechanical Stress in Shallow Trench Isolation CMOS Structures: Correlation With Defect Generation and Diode Leakage - Microthermal Imaging Based on the Transmission Change of a Thermochromic Dye Film - High Spatial Resolution OBIRCH and OBIC Effects Realized by Near-Field Optical Probe in the Analysis of High Resistance 200 nm wide TiSi Line - Advanced Failure Analysis of Deep-Submicron CMOS Device Dopant Profiles Using Scanning Kelvin Probe Microscopy - Scanning Capacitance Microscopy use in the Failure Analysis of Vcc Shorts in an Advanced Microprocessor - Session 2: FIB I - Focused Ion Beam Irradiation Induced Damages on CMOS and Bipolar Technologies - AC Hot-Carrier Effects Characterization by Circuit Modification Using Focused Ion Beam - Performing Circuit Modification and Debugging Using Focused-Ion-Beam on Multi-Layered C4 Flip-Chip Devices - Focused Ion Beam Application in Solving RFIC Oscillation Problem - Session 3: Military - The RAC Data Sharing Consortium: Sharing Test, Field and Failure Analysis Data - Failure Analysis of a Qualification Unit Injector for a Satellite Thruster - Preliminary Study of Alternative Material Development of Ballistic Attributes - Metallurgical Examination of a Galled PH 13-8 Mo Stainless Steel Main Rotor Sub-Assembly - Effects of Prior Processing on the Performance of PH 13-8 Mo Stainless Steel - Session 4: FIB II - In-Situ Electrical Monitoring and Contactless Measurement Techniques for Enhanced FIB Modifications - The Challenges of FIB Chip Repair & Debug Assistance in the 0.25 um Copper Interconnect Millennium - A Selected Area Planar TEM (SAPTEM) Sample Preparation Procedure for Failure Analysis of Integrated Circuits - Session 5: ESD - ESD Induced Failures in Cermet Trim Potentiometers - Basic Physics in Color-Coded EOS Metallization Failures (Differentiating Between EOS and ESD) - ESD Induced Failure of an Internal MOSFET in a Mixed Signal IC due to Two Different Power Supplies - Session 6: Techniques I - An Effective and Practical Analysis Technique for Open Defect Isolation at IDD Leakage Failure by Observing Transient Photo Emission - Thermally Assisted Photoemission for CMOS Device Analysis - Non-Contact Probing of Integrated Circuits Using Electrostatic Force Sampling - Session 7: Case History I - A Hermetic Package Internal Water Vapor Paradox: Nonconforming Product That Does Not Fail - Graphical Representation of Permanent Defects in Hard Disk Drives - Evaluation of Pt/PZT/Pt Capacitors Using Sims - Session 8: Techniques II - Evaluation of the Resistance of Individual Si Die to Cracking - Aluminum Interconnect Response to Electrical Overstress - Identification of Charging Effects in Plasma-Enhanced TEOS Deposition with Non-Contact Test Techniques - Session 9: Case History II - Passive Voltage Contrast Technique for Rapid In-Line Characterization and Failure Isolation During Development of Deep-Submicron ASIC CMOS Technology - Failure Analysis Case Study of PALs Used in the Flight Control Circuitry of Paveway III Laser Guided Bombs - ATE Failure Isolation Methodologies for Failure Analysis, Design Debug and Yield Enhancement - Session 10: Testing - Realistic Database for Semiconductor Device Analysis - Auto-Fault-Locating-System for Mounting Boards - Faster Defect Localization with a New Development of IDDQ - Session 11: Case History III - A Study on Discolored Bondpads and Galvanic Corrosion - Investigation of High Via Resistance of a 0.25 um CMOS ASIC Technology - Electromigration in Gold Line of GaAs IC - Session 12: Poster Sessions - Investigations of Leakage Paths in Sub-0.35 um DRAM Products Using Advanced Focused Ion Beam Techniques - Non-Destructive Chemical Decapsulation Techniques for TBGA Package Devices - Techniques to Remove the C4 Die from a Ceramic Package - Simple Flip Chip Analysis Strategies - The Logic Mapper - Making the Most of the Internet for Failure Analysis - High-Yield and High-Throughput TEM Sample Preparation Using Focused Ion Beam Automation - Application of EMS Analysis to Failure in Cell Area of Memory Device - Session 13: Discretes - Reduced Device Life Caused by Flux Entrapment During the Construction Process - Mechanical/Plasma Decapsulation Method and Thermal Finite-Element Analysis Provide Explanation for SMB Zener Failures - Innovative Ap

Abstrak :
Contents : - Terahertz Imaging: A New Technique for Inspection of Dielectric Materials - Detecting Power Shorts from Front and Backside of IC Packages Using Scanning SQUID Microscopy - Waveform Acquisition from the Backside of Silicon Using Electro-Optic Probing - Optical Probing of VLSI IC’s from the Silicon Backside - Picosecond Imaging Circuit Analysis of the IBM G6 Microprocessor Cache - Electrical Probing and Surface Imaging of Deep Sub-Micron Integrated Circuits - Comparative TDR Analysis as a Packaging FA Tool - Light Emission Spectral Analysis: The Connection Between the Electric Field and the Spectrum - Temperature Profile Measurement and Failure Characterization of ESD Protection Devices Using Spectroscopic Photon Emission Microscopy and Raman Spectroscopy - Infrared Emission Spectroscopy as a Reliability Tool - Quantitative E-beam Probe for Valid High-Speed Measurements - Short High Voltage Stress for Design-to-Process Characterization - Automatic TEM Sample Preparation - Failure Analysis of Sub-Micron Semiconductor Integrated Circuit Using Backside Photon Emission Microscopy - Sample Preparation for Backside Failure Analysis Using Infrared Photoemission Microscopy - In-situ Use of an Optical Microscope for FIB Microsurgery of Planarized Devices - Investigation on the Corrosion of Cu Metallization in the Focused Ion Beam System Due to a low I2 Background - Tin Corrosion Induced by Corrosive De-Ionized (DI) Water - Latch-Up Induced Slit Voiding in Aluminum Metal Lines - Failure Analysis of Discolored Bondpads in Wafer Fabrication - Optimizing Contact Resistance at a Resistor/Conductor Interface via Thin Film Microanalysis and Process Design of Experiments - Failure Analysis of Plastic Packaged GaAs and AlGaAs/GaAs LEDs - A Technique for Measuring Device Temperature with High Accuracy in Accelerated Operational Life Tests - Temperature Measurement on Micromachined IR Bolometers Using an Infrared Microscope - Automated Translation of Final Test Programs to Inexpensive FA Testers - FMECA Modeling-A New Approach - Selective Au-Etching on Aged GaAs-Based Devices - Nondestructive Detection of Cracks in Ceramics Using Vicinal Illumination - Evacuated FM08 Fuses Carry a Sustained Arc in a Bus over 75 VDC - Advanced Statistical Tools for Improving Yield and Reliability - An Application of Passive Voltage Contrast (PVC) to Failure Analysis of CMOS LSIs Using Secondary Electron Collection - Integrated Circuit Device Repair Using FIB system: Tips, Tricks, And Strategies - Modeling and Optimizing XeF2-Enhanced FIB Milling of Silicon - Reliability Test Results for Pt FIB Interconnect Structures - Focused Ion Beam Induced Effects on MOS Transistor Parameters - Relay Failures Specific to Space Applications - Failure Analysis of Autoclave-Stressed SRAMs with Aluminum Fuses - Electrostatic-Discharge (ESD) Failures in Thin-Film Resistors - Characterization of Gold Embrittlement in Solder Joints - In-situ Dual Beam (FIBSEM) Techniques for Probe Pad Deposition and Dielectric Integrity Inspection in 0.2 μm Technology DRAM - Die Backside FIB Preparation for Identification and Characterization of Metal Voids - FIB Micromachining and Nano-Structure Fabrication - Characterization and Fault Identification of Copper BEOL Sub 0.25 um Six Level Metal Microprocessor Designs - Analysis Of Ohmic Contact Metal Deposition Using FIB/SEM For A GaAs MESFET Clock Buffer IC Device - Identification of Subtle Isb Failure Mechanisms - Investigation of High Frequency Failures on a 0.35 um CMOS IC - BGA and Advanced Package Wire to Wire Bonding for Backside Emission Microscopy - Current-Signature-Based Analysis of Complex Test Fails - New Techniques for Logic Fault Diagnosis with a Case Study on the 440 BX Chipset - Electromigration and Electrochemical Reaction Mixed Failure Mechanism in Gold Interconnection System - Identification of Yield-Limiting Defects in a 0.5 Micron, Shallow Trench Isolation Technology - Visualization of Local Gate Depletion in PMOSFETs Using Unique Backside Etching and Selective Etching Technique - Residual Photoresist Identified as Cause for Frequency-Dependent Signal-to- Noise Failure After Autoclave Stress Testing - From IDDQ Fault Detection to Defect Localization in Logic CMOS Integrated Circuits: Key Issues - Recent Advances in Broad Ion Beam Techniques/Instrumentation for SEM Specimen Preparation of Semiconductors - A New Focused-Ion-Beam Microsampling Technique for TEM Observation of Site-specific Area’s - A Combined Infrared/Visible Photoemission Microscope - Correlation of Electronic and Thermal Properties of - Index

Abstrak :
[ABSTRAK
Pemanfaatan panas yang tidak terpakai adalah salah satu bentuk efisiensi energi. Panas yang tidak terpakai dari industri dan transportasi dapat dikonversikan menjadi energi listrik dengan menggunakan material termoelektrik. Keramik Ca3Co2O6 dan CaMnO3 adalah salah satu contoh material. Penelitian yang dilakukan adalah percobaan sintesis keramik Ca3Co2O6 dan CaMnO3 menggunakan metode proses reaksi padatan. Sintesis material menggunakan bahan baku berbasis karbonat, yaitu CaCO3, CoCO3 dan MnCO3. Sintesis dilakukan dengan mengacu pada diagram fasa sistem Ca-Co-O dan Ca-Mn-O. Berdasarkan analisis termal, untuk mendapatkan fasa CaO, Co3O4 dan Mn2O3 maka bahan baku yang berbasis karbonat harus dikalsinasi pada suhu ≥ 800°C. Suhu pembentukan Ca3Co2O6 berdasarkan diagram fasa sistem Ca-Co-O dan Ca-Mn-O adalah pada rentang suhu 824- 1027°C dan CaMnO3 pada rentang suhu 1100-1600°C dengan lingkungan atmosfir udara bebas. Hasil sintesis diperoleh fasa Ca3Co2O6 terbentuk paling baik pada suhu 1000°C, tetapi masih terdapat fasa lain yaitu CoO dan Co3O4. Fraksi berat masing-masing fasa adalah Ca3Co2O6 : CoO : Co3O4 = 71,1 : 21,6 : 7,3. Sedangkan pada sintesis CaMnO3, fasa CaMnO3 sudah terbentuk satu fasa pada suhu 1100°C.

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ABSTRACT
Heat is one kind of energy source that can increases energy efficiency. Heat from industrial and transportation can be converted into electrical energy through a thermoelectric material. Ca3Co2O6 and CaMnO3 ceramics are thermoelectric materials. The main idea of this research is synthesis of Ca3Co2O6 and CaMnO3 ceramics using solid state reaction method. Synthesis of thermoelectric materials using carbonate-based raw materials. The raw materials are CaCO3, CoCO3 and MnCO3. Synthesis of material is done with reference to the phase diagram system of Ca-Co-O and Ca-Mn-O. Based on thermal analysis, the carbonate-based raw materials must be calcined at temperature ≥ 800°C to get CaO, Co3O4 and Mn2O3 phases. The temperature formation of Ca3Co2O6 and CaMnO3 are about 824-1027°C based on phase diagram system of Ca-Co-O and 1100-1600°C based on phase diagram system of Ca-Mn-O in air. Ca3Co2O6 phase is formed at temperatures of 1000°C, but there were some other phase, i.e,. CoO and Co3O4. Weight fraction of each phase is Ca3Co2O6 : CoO : Co3O4 = 71,1 : 21,6 : 7,3. While CaMnO3 one phase is already formed at 1100°C.;Heat is one kind of energy source that can increases energy efficiency. Heat from industrial and transportation can be converted into electrical energy through a thermoelectric material. Ca3Co2O6 and CaMnO3 ceramics are thermoelectric materials. The main idea of this research is synthesis of Ca3Co2O6 and CaMnO3 ceramics using solid state reaction method. Synthesis of thermoelectric materials using carbonate-based raw materials. The raw materials are CaCO3, CoCO3 and MnCO3. Synthesis of material is done with reference to the phase diagram system of Ca-Co-O and Ca-Mn-O. Based on thermal analysis, the carbonate-based raw materials must be calcined at temperature ≥ 800°C to get CaO, Co3O4 and Mn2O3 phases. The temperature formation of Ca3Co2O6 and CaMnO3 are about 824-1027°C based on phase diagram system of Ca-Co-O and 1100-1600°C based on phase diagram system of Ca-Mn-O in air. Ca3Co2O6 phase is formed at temperatures of 1000°C, but there were some other phase, i.e,. CoO and Co3O4. Weight fraction of each phase is Ca3Co2O6 : CoO : Co3O4 = 71,1 : 21,6 : 7,3. While CaMnO3 one phase is already formed at 1100°C., Heat is one kind of energy source that can increases energy efficiency. Heat from industrial and transportation can be converted into electrical energy through a thermoelectric material. Ca3Co2O6 and CaMnO3 ceramics are thermoelectric materials. The main idea of this research is synthesis of Ca3Co2O6 and CaMnO3 ceramics using solid state reaction method. Synthesis of thermoelectric materials using carbonate-based raw materials. The raw materials are CaCO3, CoCO3 and MnCO3. Synthesis of material is done with reference to the phase diagram system of Ca-Co-O and Ca-Mn-O. Based on thermal analysis, the carbonate-based raw materials must be calcined at temperature ≥ 800°C to get CaO, Co3O4 and Mn2O3 phases. The temperature formation of Ca3Co2O6 and CaMnO3 are about 824-1027°C based on phase diagram system of Ca-Co-O and 1100-1600°C based on phase diagram system of Ca-Mn-O in air. Ca3Co2O6 phase is formed at temperatures of 1000°C, but there were some other phase, i.e,. CoO and Co3O4. Weight fraction of each phase is Ca3Co2O6 : CoO : Co3O4 = 71,1 : 21,6 : 7,3. While CaMnO3 one phase is already formed at 1100°C.]