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"This brief discusses the impact of gold, silver, zinc oxide, and cerium oxide nanoparticles on the growth and viability of both Gram-negative and Gram-positive bacterium. Moreover, it analyses the relationship between bacterial growth inhibition, reactive oxygen species generation, the regulation of transcriptional stress genomes, and the toxicity of these materials. Finally, it reviews the specific metallic nanomaterials and highlights their modes of synthesis, reactivity at surfaces, and the importance of assay procedures in determining their toxicity levels. "

"This book presents the latest science and engineering research and achievements in the fields of microsystems and nanotechnology, bringing together contributions by authoritative experts from the United States, Germany, Great Britain, Japan and China to discuss the latest advances in microelectromechanical systems (MEMS) technology and micro/nanotechnology. The book is divided into five parts, the fundamentals of microsystems and nanotechnology, microsystems technology, nanotechnology, application issues, and the developments and prospects."

"The book includes chapters by an international team of experts. Chemical, physical, electrochemical, photochemical and mechanical methods of synthesis are covered. Moreover, biological synthesis using microbes, an option that is both eco-friendly and economically viable, is presented. The antimicrobial potential of different nanoparticles is also covered, bioactivity mechanisms are elaborated on, and several applications are reviewed in separate sections. Lastly, the toxicology of nano-antimicrobials is briefly assessed."

"This book presents the fabrication of optoelectronic nanodevices. The structures considered are nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene. The device applications of these structures are broadly explained. The book deals also with the characterization of semiconductor nanostructures. "

"This book reviews the most basic of the TRIZ algorithm tools and provides templates for readers to use in analyzing their difficult problems and provides a mental framework for their solution. It also describes TRIZ techniques for basic strategic planning in a business sense."

"Hadiah nobel diberikan pada ilmuwan fisika atas keberhasilan pada peralatan mikroskop eptik yang bisa menguraikan objek sampai ukuran nano sehingga bisa meningkatkan ilmu kedokteran dalam menelusuri jaringan hidup sampai kromosom dengan tidak menghancurkan objek yang diamati. Istilah nano teknologi dapat diterapkan pada apapun yang melibatkan manipulasi partikel yang memiliki setidaknya satu dimensi yang mengukur 100 nanometer atau kurang. Para ilmuwan Badan Ilmu Pengetahuan, Teknologi dan Riset ? Institut Penelitian Bahan dan Teknik Singapura (MRE) bersama dengan Universitas Nasional Singapura telah membentuk sebuah tim untuk mematenkan material komposit berbasis polimer byang sangat lunak dan fleksibel tetapi kaku terhadap benturan, seperti ?corn strach?. Material tersebut dapat digunakan untuk menggantikan plat baja yang sering dipakai oleh prajurit pada body armor yaitu Kevlar. Demikian terobosan yang diumumkan oleh peneliti IMRE dan NUS pada bulan Juli 2010."

"This book is devoted to a wide range of problems concerning applications of nanomaterials and nanodevices as effective solutions to modern ecological problems. Leading experts in nanoscience and nanotechnology present the key theoretical, experimental and implementation issues related to the creation and utilization of novel nanoscale devices to help ensure ecological security. The authors discuss appropriate nanotechnologies for minimizing various types of risk: to human life, technogenic risk, or indeed terrorist threats. Particular emphasis is placed on defining and studying the required materials properties, and in the field on nanoscale devices for sensors and monitoring."

"This text book will bring together a mix of both internationally known and established senior scientists along side up and coming (but already accomplished) junior scientists that have varying expertise in fundamental and applied nanotechnology to biology and medicine."

"Riset ini difokuskan pada karakteristik linier arus-tegangan dioda P-I-N silikon skala nano doping tinggi dalam rentang temperatur dari 50K hingga 250 K serta karakteristik arus-tegangan dan konduktansi dioda P-N Silikon skala nano doping tinggi pada temperatur 5,5K. Untuk itu dioda P-N dan P-I-N dengan konsentrasi doping tinggi difabrikasi pada wafer ultra tipis berstruktur silicon-oninsulator (SOI). Dari hasil fabrikasi telah diperoleh konsentrasi doping tinggi Boron dan Phosphorus pada divais dioda mencapai 1×1020 cm-3 and 2×1020 cm-3, berturut-turut. Pengukuran karakteristik arus-tegangan dioda P-I-N silikon skala nano doping tinggi dilakukan pada beberapa divais dengan lapisan intrinsik sepanjang 200 nm dan 700 nm. Linieritas arus pada rentang forward bias dari 1,5 V hingga 2,0 V dan rentang temperatur dari 50 K hingga 250 K menunjukkan divais ini sesuai untuk sensor temperatur rendah. Pada pengukuran juga diperoleh data bahwa dioda P-I-N silikon skala nano doping tinggi menghasilkan arus yang lebih tinggi saat temperatur diturunkan dalam rentang forward bias dari 1,5 V hingga 2,0 V. Selain itu juga diperoleh data bahwa divais skala nano dengan lapisan intrinsik yang lebih panjang dan lebih lebar akan menghasilkan arus yang lebih tinggi pada rentang forward bias dari 1,5 V hingga 2,0 V dan temperatur dari 50K hingga 250K. Hasil pengukuran pada dioda P-N silikon skala nano doping tinggi pada rentang forward bias hingga 0,1 Volt maupun rentang reverse bias hingga -0,1 Volt menghasilkan beberapa puncak konduktansi yang menunjukkan kesesuaian nilai dengan level energi density of state dua dimensi (2D DOS) dan level energi kombinasi phonon pada temperatur 5,5K. Pada forward bias, level energi diskret heavy hole, light hole, serta kombinasi phonon TA, LA, TO dan LO berkontribusi signifikan pada puncak konduktansi dalam rentang tegangan hingga 0,1 Volt. Demikian juga halnya pada reverse bias, level energi diskret elektron 2-fold valley, 4-fold valley, serta kombinasi phonon TA, LA, TO dan LO berkontribusi signifikan pada puncak konduktansi dalam rentang tegangan hingga -0,1 Volt. Transport elektron pada dioda P-N Silikon dalam skala nano doping tinggi akan mengalami puncak konduktansi saat elektron memiliki energi yang sama dengan level diskret energi 2D DOS. Hal ini membuktikan adanya phonon-assisted tunneling pada dioda P-N silikon skala nano doping tinggi.

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This report is focused on linier current-voltage (I?V) characteristic of highly-doped nanoscale Silicon P-I-N diodes at temperature from 50K to 250K and also I-V and conductance characteristics of highly-doped nanoscale Silicon P-N diode at temperature 5.5K. For that purpose, we fabricated nano scale P-I-N and P-N diodes within ultra thin silicon-on-insulator (SOI) structures. From fabrication, we achieved high doping concentrations of Boron and Phosphorus in SOI diodes, 1×1020 cm-3 and 2×1020 cm-3, respectively.

Measurement of current-voltage characteristics of highly-doped nanoscale silicon PIN diode is performed on devices with intrinsic layer length of 200 nm and 700 nm. The current linearity under forward bias range from 1.5 V to 2.0 V and temperature range from 50K to 250K shows that these devices are suitable for lowtemperature sensor. The measurement data shows also that highly-doped nanoscale silicon PIN diode produces higher current when the temperature is lowered under forward bias from 1.5 V to 2.0 V. In addition, the data shows that nanoscale devices with longer and wider intrinsic layer would generate higher current under forward bias range from 1.5 V to 2.0 V and temperature from 50K to 250K.

Measurement of highly-doped nanoscale silicon P-N diode under forward bias to 0.1 Volt and also reverse bias to -0.1 Volt results conductance peaks that show relationship with two-dimensional density of state (2D DOS) and phonon combination energy level at temperature 5.5K. Under forward bias, discrete energy level of heavy hole, light hole and phonon combination of TA, LA, TO and LO have significant contribution to conductance peaks in range 0.1 Volt. Also under reverse bias, discrete energy level of electron 2-fold valley, 4-fold valley and phonon combination of TA, LA, TO and LO have significant contribution to conductance peaks in range -0.1 Volt. Electron transport of highly-doped nanoscale silicon P-N diode will experience conductance peaks when it has equal energy with 2D DOS discrete energy level. It proves the existence of phonon-assisted tunneling on highly-doped nanoscale silicon P-N diode."

"Applied nanotechnology takes an integrated approach to the scientific, commercial and social aspects of nanotechnology, exploring :

- The relationship between nanotechnology and innovation

- The changing economics and business models required to commercialize innovations in nanotechnology

- Product design case studies

- Applications in various sectors, including information technology, composite materials, energy, and agriculture

- The role of government in promoting nanotechnology

- The potential future of molecular self-assembly in industrial production

In this 2e, new chapters have been added on energy applications and the role of nanotechnology in sustainability. The section on the safety of nanoproducts has also been updated, and material on funding and commercialization has been updated and expanded, with new case studies illustrating the experience of new startups in a challenging economic environment."