Hasil Pencarian  ::  Simpan CSV :: Kembali

"Electrons in a single electron transistor (SET) are transported one by one from source to drain based on the coulomb blockade mechanism. The transport rate is sensitively influenced by the presence of event a single electron charge located near the quantum dot. Based on this characteristic, we propose a Double Quantum Dot (DQD) SET to manipulate the presence of an electron in Quantum Dot (QD) as an implementation of a single-electron logic concept. The existence of an electron in the QD is used to represent logic 0 (no electron in QD) or logic 1 (an electron in QD). The logic states are sensed by a SET charge detector. Design of circuit based on DQD and SET charge detector are simulated by using SIMON 2.0 software. From the simulation, we have successfully developed a two-bit logic circuit by controlling the presence of an electron in DQD. We found that the existence of an electron in QD can be controlled by application of a gate voltage larger than 190µV. Gate should be separated from QD by a non-tunnel capacitor of 500 aF. No larger than 1 aF of interdot tunnel capacitance is required to isolate the QD from one to another. The existence of an electron in QD is successfully detected by SET based charge detector."

"Elektron dapat dipindahkan satu persatu dalam konsep Single Electron Transistor (SET). Salah satu keunggulan SET adalah kemampuannya untuk mendeteksi adanya muatan yang sangat kecil. Dalam konsep quantum computing, pendeteksian ini diperlukan untuk menentukan kondisi dari suatu Quantum Dot (QD), apakah dalam kondisi logika 0 (tidak ada elektron) atau 1 (ada elektron).Pada riset ini, desain Double Quantum Dot (DQD) akan diteliti agar dapat mengontrol keberadaan elektron dalam suatu dot sebagai implementasi konsep quantum computing. Selanjutnya, desain SET charge detector akan ditambahkan untuk mendeteksi keberadaan elektron tersebut. Desain DQD dan SET charge detector akan disimulasikan dengan nilai parameter tertentu menggunakan software SIMON 2.0.Dari simulasi menggunakan rangkaian yang didesain, didapatkan bahwa keberadaan sebuah elektron dapat dikontrol dengan pemberian tegangan gate sebesar 200 µV. Antara gate dan QD dipisahkan oleh kapasitor sebesar 500 aF. Keberadaan elektron pada QD dideteksi oleh SET charge detector dengan terjadinya arus pada source.

---

Electrons can be moved one by one in the concept of Single Electron Transistor (SET). One of the advantages of SET is its ability to detect the presence of a very small charge. In quantum computing concept, the detection is required to sense the condition of a Quantum Dot (QD), does the logic states 0 (there is no an electron) or 1 (there is an electron).

In this research, design of a Double Quantum Dot (DQD) will be examined in order to manipulate the presence of electron in a QD as the implementation of quantum computing concept. Furthermore, design of a SET charge detector will be added to detect the presence of the electron. Design of DQD and SET charge detector will be simulated under certain parameter values using SIMON 2.0 software.

From simulation based on our proposed circuit, we found that the existence of an electron can be controlled by giving the gate voltage of 200µV. Gate is separate from QD by a capacitor of 500 aF. The existence of electron in the QD is detected by the SET charge detector with presence of current at the source."

"Penggunaaan Single Electron Transistor SET merupakan salah satu pendekatan yang dilakukan untuk menggantikan penggunaan transistor. Meskipun SET memiliki ukuran divais dan konsumsi daya yang lebih kecil dibanding transistor biasa, suhu operasionalnya masih sangat rendah dibawah 50 Kelvin. Keterbatasan temperatur operasional pada SET ini menjadi salah satu masalah yang masih didiskusikan secara luas dalam pengaplikasian SET secara global. Skripsi ini melaporkan hasil simulasi rangkaian SET dengan Quantum Dot yang disusun seri dan dilihat perbandingan antara temperatur maksimal dengan jumlah Quantum Dot. Hasil simulasi di perangkat lunak SIMON 2.0 menunjukkan bahwa bertambahnya jumlah Quantum Dot yang disusun seri akan meningkatkan batas temperatur operasional dari SET. Dengan menggunakan pendekatan Multiple Quantum Dot, suhu operasional dari SET dapat mencapai 120 Kelvin.

---

The usage of Single Electron Transistor SET is one of the alternatives to replace the usage of transistor. Although SET has a smaller size and power consumption compared to normal transistors, the operational temperature is still fairly low below 50 Kelvin . This limited operational temperature became the most controversial problem that is still being discussed before applying SET worldwide. This Undergraduate Thesis reports the result from a simulation of a SET circuit is designed with Quantum Dot connected in series and the connection between maximum operational temperature and the amount of Quantum Dot in series will be observed. The result of the simulation from SIMON 2.0 software shows that the increase in Quantum Dot aligned in series will increase the maximum operational temperature. Using the Multiple Quantum Dot approach, the operational temperature of the SET can reach up to 120 Kelvin."

"Divais SET dapat digunakan untuk banyak aplikasi seperti single electron switching, single photon detector, single electron detector, quantum bit memory, dll. Untuk aplikasi seperti quantum bit memory, diperlukan dua buah quantum dot (QD) yang disusun secara paralel. Pada thesis ini, dua buah SET yang disusun secara paralel disimulasikan dengan software SIMON 2.0 untuk mendapatkan parameter-parameter yang diperlukan guna mengontrol perpindahan elektron antar QD. Dari hasil simulasi, didapatkan bahwa dua buah SET yang disusun secara paralel bertindak sebagai dua buah SET yang independen pada saat junction capacitance antar QD bernilai di atas 5×10–18 F. Perpindahan elektron antar QD terjadi apabila terdapat perbedaan potensial pada dua QD yang melebihi suatu nilai minimum. Nilai minimum tersebut dipengaruhi oleh resistansi dan kapasitansi junction capacitance. Semakin besar resistansi, nilai minimum perbedaan potensial yang diperlukan akan semakin membesar sedangkan apabila kapasitansi semakin besar, nilai minimum perbedaan potensial yang diperlukan akan semakin mengecil.

---

SET devices can be used in many applications, such as single electron switching, single photon detector, single electron detector, quantum bit memory, etc. For applications such as quantum bit memory, two quantum dots (QDs) in parallel position are required. In this thesis, two SETs in parallel configuration are simulated with SIMON 2.0 software in order to obtain parameters which are needed to control the interdot electron movement. From the results of the simulation, it is obtained that two SETs in parallel configuration will act as two independent SETs when the interdot junction capacitance is above 5×10–18 F. The interdot electron movement occurs when a potential difference exist between the two QDs. The same potential difference must surpass the required minimum value which is influenced by the interdot resistance and capacitance. The bigger the resistance, the required minimum value of potential difference will be increased while the bigger the capacitance, the required minimum value of potential difference will be decreased."

"This paper will review atomic -like phenomena in a semiconductor quantum dot which their size ,shape and interactions can be precisely controlled through the use of nanofabrication technology

---

"

"ABSTRAK Single Electron Transistor (SET) merupakan sebuah transistor yang memanfaatkan pergerakan satu buah elektron. Salah satu aplikasi dari single elektron transistor adalah single electron memory. Pada skripsi ini, dilakukan desain memori berbasis floating dot dan difokuskan pada analisa pergerakan elektron dalam divais SEM dengan mengatur kapasitansi pada tunnel junction antara quantum dot dan floating dot. Dengan adanya elektron pada quantum dot akan mengubah level energi dari floating dot. Fenomena hysterisis diperoleh pada rentang kapasitansi antar dot C12 = 9.999 x 10-17 – 1 x 10-19 F. Efek kapasitansi antar dot juga dapat menyebabkan terjadinya fenomena elektron berpindah antar dot dengan cepat pada rentang kapasitansi antar dotnya C12 = 10-18 - 10-16 F.

---

ABSTRACT Single Electron Transistor (SET) is a very sensitive device which has capability to detect single electron. One of SET’s application is a single electron memory (SEM). We design SEM based on floating dot and we analyze the impact of capacitance variation of tunnel junction between quantum dot and floating dot about the electron transfer in SEM device. The presence of electron in quantum dot will affect energy level of floating dot. The hysterisis phenomena which is one of SEM’s phenomena is obtained in the range capacitance C12 = 9.999 x 10-17 – 1 x 10-19 F. The effect of capacitance between quantum dot and floating dot occured at C12 = 10-18 - 10-16 F."