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"This book presents the technological, physical, and mathematical fundamentals for a design paradigm shift, from a deterministic process to a probability-orientated design process for microelectronic circuits. Readers will learn to evaluate the different sources of variations in the design flow in order to establish different design variants, while applying appropriate methods and tools to evaluate and optimize their design."

"ABSTRAKPada senyawa semikonduktor InGaAsP (Indium - Galium - Arsenit-Phosfor) yang ditumbuhkan diatas substrat InP (Indium-Phosfor), lapisan aktif Ins-xGaxAsyPI-y akan menentukan emisi foton pada panjang gelombang L untuk harga x dan y tertentu. Lapisan aktif yang mempunyai energi gap Eg = 0,8 eV ditumbuhkan sesuai kisi substrat p-InP dari struktur jamak ganda InGaAsP/InP akan menghasilkan spektrum emisi spontan pada daerah panjang gelombang X = 1,55 mm. Doping konsentrasi aseptor Na lapisan p-InP akan menentukan puncak panjang gelombang Xp dari pada spektrum emisi spontan. Spektrum emisi spontan pada puncak panjang gelombang Xp = 1,55 pm memungkinkan untuk ditransmisikan melalui media serat optik yang terbuat dari bahan serat silika optik mode tunggal. Pada penulisan tugas thesis ini dilakukan simulasi spektrum emisi spontan relatif R dari lapisan aktip terhadap perubahan dari konsentrasi aseptor Na menggunakan perangkat lunak Borland delphi. Analisa hasil simulasi menunjukkan spektrum emisi spontan relatif R pada puncak panjang gelombang 7-p = 1,55 pm terjadi pada konsentrasi aseptor Na = 150 x 1017 Cm-9 dan parameter band tail = 0,072 eV.

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In semiconductor compound of InGaAsP (Indium--Gallium--Arsenit-Phosfor) being growing on InP (Indium--Phosfor) substrate, the active layer of Ini-xGaxAsyPI-y is going to determine photon emission at wavelength of k for values certain of x and y.

The active layer having gap energy of Eg = 0.8 eV lattice-matched to InP of double heterostructure InGaAsP/InP yield spontaneous emission spectrum at wavelength region of X = 1.55 pm. Doping acceptor concentration of Na for p--InP layer would determine on peak wavelength of kp for spontaneous emission spectrum. The spontaneous emission spectrum on the peak wavelength of Xp = 1.55 pm is possible for use as transmitted through single mode fiber optic which made of optic silica material.

In the writing this thesis, the relative spontaneous emission spectrum of R from active layer simulated with various of Na acceptor concentrations by using delphi borland software.

Simulation result analyzing show that relative spontaneous emission of R on peak wavelength of Xp = 1.55 pm is happened for acceptor concentration of Na = 150 x 1017 Cm-3 and band tail parameter of 77 = 0.072 eV."