Hasil Pencarian  ::  Simpan CSV :: Kembali

"Contents :- A Comparitive Study of Electron and Ion Beam Induced Charge Imaging Techniques in CMOS Failure Analysis - Infrared Light Emission From Semiconductor Devices - The Use of Near-Field Scanning Optical Microscopy for Failure Analysis of ULSI Circuits - Golden Devices II: Alchemy in the 0.35 um Era - Focused Ion Beam Assisted Circuit Debug of a Video Graphics Chip - Two Unique Case Studies Performed With Photoemission Microscopy (PEM) - Application of Photoemission Microscopy and Focused Ion Beam Microsurgery to an Investigation of Latchup - Localizing Heat-Generating Defects Using Fluorescent Microthermal Imaging - A User-Friendly System for Fluorescent Microthermal Imaging and Light Emission Microscopy - Fast, Clean and Low Damage Deprocessing Using Inductively Coupled and RIE Plasmas - X-Ray Microfocus Radioscopy and Computed Tomography for Failure Analysis - Low Resistivity FIB Depositions Within High Aspect Ratio Holes - Grains Observation Using FIB Anisotropic Etch Followed by AFM Imaging - Cross-Sectional Specimen Preparation of Fragile Failure Location in Thin-Film Transistors Using Focused Ion Beam Etching and Transmission Electron Microscope - Low Acceleration Voltage EBIC Using FESEM and Application to Cross- Sectional Junction Evaluation - Contamination Diagnosis Using Contamination-Defect-Fault (CDF) Simulation - FLOSPAT: Fault Localization by Sensitized Path Transformation - Fault Verification Simulation for Light-Emission Microscopy and Liquid-Crystal Analysis - Fault Diagnosis on the TMS320C80 (MVP) Using FastScanTM - Modeling IC Defects Using Circuit Simulation Software - Characterization of Unfilled Tungsten Plugs on a 0.35 um CMOS Multilevel Metallization Process - Failure Analysis of a Half-Micron CMOS IC Technology - Burn-in Failure Analysis of 0.5 um 1 MB SRAM: Barrier Glue Layer Cracks and Tungsten Plug - The Application of Novel Failure Analysis Techniques and Defect Modeling in Eliminating Short Poly End-Cap Problem in Submicron CMOS Devices - Case Study: Unique Stress Induced Gate Oxide Defects in a CMOS Analog/Digital Device Revealed by Backside Silicon Removal - Risk Assessment in Signature Analysis - Signature Analysis: Statistical Models and Their Application to FA - A Signature Analysis Method for IC Failure Analysis - TEM Sample Preparation Using A Focused Ion Beam and A Probe Manipulator - Pin-Point Transmission Electron Microscopic Analysis Applied to Off-Leakage Failures of a Bipolar Transistor in 0.5 um BiCMOS Devices - TEM Cross-Sectional Analysis of ESD Induced Damage in Input Protection Circuitry - A Study of Measurement Methods for Detecting Voiding and Delamination of Die Attach Materials in Power Semiconductor Devices - Failure Analysis of the Die-Attach in a Metal-Type Package - Charge Diffusion and Reciprocity Theorems: A Direct Approach to EBIC of Ridge Laser Diodes - Characterization and Elimination of Forward Snapback Defects in GaAs Light Emitting Diodes - Temperature Dependence of Quiescent Currents as a Defect Prognosticator and Evaluation Tool - Contactless Testing of Pulse Propagation in IC's-A Comparison Between OBIC and Captive-Coupling Detection Techniques - Electron-Beam Analysis of the Turn-On Speed of Grounded-Gate NMOS ESD Protection Transistors During Charged Device-Model Stress Pulses - Contactless Function Test of Integrated Circuits on the Wafer - Package Related Failure Mechanisms in Plastic BGA Packages Used for ASIC Devices - Failure Analysis of Flip-Chip Interconnections Through Acoustic Microscopy - Signature Analysis of Package Delamination Using Scanning Acoustic Microscope - A Case Study of Post De-Tape Cleans on Mold Compound Adhesion - Spatial Evaluation of Resolution in a Scanning Ultrasonic Microscope. Microassembling Technologies Characterization: Differences Between A-Scan and C-Scan Analysis Modes - Macro and Micro Thermal Model of an Elevated Temperature Dielectric Breakdown in Printed Circuit Boards - A Review of Wet Etch Formulas for Silicon Semiconductor Failure Analysis 301 Carbon Coating for Electron Beam Testing and Focus Ion Beam Reconfiguration - A Technique for Achieving Precision Cross Sections of Released Surface Micromachined Structures - The Study of ESD Destructive Mechanism for PN-Junction - Interconnect Failure Dependence on Crystallographic Structure - Dielectric Breakdown in Printed Circuit Boards at Elevated Temperatures - Mechanism Study of Contact Corrosion in Unpatterned Metal Wafer - TPLY for Yield Improvement - A New Robust Backside Flip-Chip Probing Methodology "

"Contents :- Session 1: Advanced Techniques - Scanning Magnetoresistive Microscopy for Die-Level Sub-Micron Current Density Mapping - High Resolution Current Imaging by Direct Magnetic Field Sensing - Fault Isolation of High Resistance Defects using Comparative Magnetic Field Imaging - High Resolution Backside Thermography using a Numerical Aperture Increasing Lens - Session 2: Optical Techniques - Study of Critical Factors Determining Latchup Sensitivity of ICs using Emission Microscopy - New Applications of Thermal Laser Signal Injection Microscopy (T-LSIM) - PC Card Based Optical Probing of Advanced Graphics Processor using Time Resolved Emission - Time-Resolved Optical Measurements from 0.13μm CMOS Technology Microprocessor using a Superconducting Single-Photon Detector - IC Diagnostic with Time Resolved Photon Emission and CAD Auto-channeling - Session 3: Package Level Analysis 1 - 3D X-ray Computed Tomography (CT) for Electronic Packages - High-Angle Electron Microscopy Technique for Analysis of Thin Film Contamination on IC Package Exteriors - Solder Bump Defects in Ceramic Flip Chip Packages and Their Acoustic Signatures. - Copper Bond over Active Circuit (BOAC) and Copper over Anything (COA) Failure Analysis - Investigation of Bond-pad Related Inter-metal Dielectric Crack - Session 4: Sample Preparation 1 - Enhanced SEM Doping Contrast - Interconnect and Gate Level Delayering Techniques for Cu/Low k Technology Failure Analysis - Backside Deprocessing of CMOS SOI Devices for Physical Defect and Failure Analysis - A Novel Approach to Front-side Deprocessing for Thinned Die after Backside Failure Isolation - Session 5: System Level Analysis - Dynamic Infrared System Level Fault Isolation - X-ray Laminography Benchmarking and Failure Analysis of Solder Joint Interfaces - XRF Correlation of Board Reseats due to Intermittent Failures from the use of Thin Gold Plating finish on the Contact Fingers - Session 6: Metrology and Materials Analysis 1 - Deal Time SEM Imaging of FIB Milling Processes for Extended Accuracy on TEM Samples for EFTEM Analysis - A Method for Exact Determination of Dram Deep Trench Surface Area - A Review of TEM Observations of Failures of the Memory Cell in a Deep Trench Capacitor DRAM - The Effect of Tem Specimen Preparation Method on Ultra-thin Gate Dielectric Analysis - Forward Scattered Scanning Electron Microscopy for Semiconductor Metrology and Failure Analysis - Session 7: Failure Analysis Process - Contributions of a Formal Analysis Metaprocess to Breakthrough Failure Analysis Results - SRAM Failure Analysis Strategy - VLSI Design for Functional Failure Analysis in the < 90 nm and Flip-chip era - Identification of an IDDQ Failure Mechanism Using a Variety of Front and Backside Analytical Techniques - Novel Application of Transmission Electron Microscopy and Scanning Capacitance Microscopy for Defect Root Cause Identification and Yield Enhancement - Session 8: Metrology and Materials Analysis 2 - Contact Failure due to Particulate Defect in a 0.13 μm CMOS Process - Microhardness Testing on Via Fill Material for Via In Pad Technology - Application of ToF-SIMS to Airborne Organic Contamination Analysis - Session 9: Test 1 - Yield-Modeling and Test Oriented Taxonomy of IC Structure Deformations - Analysis of IC Manufacturing Process Deformations: An Automated Approach Using SRAM Bit Fail Maps - Electrical Failure Analysis and Characterization of Leakage Paths Leading to Single Cell Failures in 128Mbit SDRAMs - Session 10: Poster - A Study on Fluorine-Induced Corrosion on Microchip Aluminum Bondpads - Advanced Process Defect Detection by Using Dynamic Bias Condition and MCT Camera - Via Chain Failure Analysis Using a Combination of E-Beam and Optical Beam Techniques - ESD Failure Signature Differences in the Devices Core Logic and Protection Structures -- A Case Study - ESD: Correlation between Electrical Signature and Failure Modes - Semi-Automated Cross-Section Process for Complti-Face Perimeter Samples - FIB Micro-pillar sampling of Si devices and its 3D observation - Recent Developments in Automated Sample Preparation for FESEM - Wet Delineation of SEM Samples having Cu Interconnects - An Evolution in Plastic Decapsulation Process Improvement - Near IR Continuous Wavelength Spectroscopy of Photon Emissions from Semiconductor Devices - Defect Isolation and Characterization in Contacts by Using Primary Voltage Adjustment"

"Higher education the world is at present changing. One of the factors contributing is the changing economic situation. A triangle, i.e. the academic community, the state, the market demand, and the interaction between those factors, controls higher education in a country. This pattern of interaction is undergoing a transformation as most countries would like to reform their higher education system through a series of directed and systematic regulation and deregulation. Williams (1995) uses the term "marketization" for those processes.Competition in the international economy as one of the results in a heavy burden for developing countries. In the New World order human resources is an important if not the most important factor in determining the success of economic and national development. One of the result of global capitalism on higher education is the rise of competition as governments try to raise enrolment in public and private universities. This results in suffer competition should result in improved capacity to compete among universities and as a result there should be a decrease in the costs of higher education and research. Universities do not only have to compete among themselves, but also in developed countries as there is an increase in competition to obtain the best students, the best teachers, and bigger funding for education and research. Universities do not only have to compete among themselves, but also with the industrial and public sectors, for instance to get the best teachers, different countries have different approaches to this problem. Malaysia e.g. approaches the problem by empowering the universities, i.e. by giving more autonomy through corporatization of the universities."