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"Fungsi dieiektrik kompleks lapisan tipis amorfsilikon karbon (a-Sii.xCx:H) hasit deposisi sputtering telah ditentukan dengan menggunakan hasil pengukuran spektroskopi ellipsometer. Besaran optis lapisan tipis a-Si/.,Cx:H diperoleh dengan prosedur MSE terhadap tan i// dan cos A hasil eksperimen dengan tan y/ dan cos A model matematis sistem lapisan tipis. Mode! sistem tiga media digunakan untuk mendiskripsikan lapisan tipis a-Sii.xCx:H di alas substrat corning 7059 yang terletak di udara. Fungsi dieiektrik kompleks yang diperoleh merupakan kurva yang mulus terhadap energi dan memperlihatkan kehadiran maksimum kurva. Fungsi dieiektrik bagian riil si merefleksikan kuadrat bagian riil indeks bias n sedangkan fungsi dieiektrik bagian imajiner £2 mewakili karakteristik bagian imajiner indeks bias k. Peningkatan konsentrasi karbon mengurangi tinggi maksimum dan menggeser posisi maksimum kurva ke energi yang lebih tinggi. Gap optis bertambah dengan peningkatan konsentrasi karbon sedangkan parameter B berkurang dengan meningkatnya konsentrasi karbon. Berkurangnya harga parameter B berhubungan dengan peningkatan ketidak-teratwan dari sistem amorf. Pengaruh peningkatan konsentrasi karbon terhadap fungsi dieiektrik, gap optis dan parameter B merupakan akibat dari berkurangnya ikatan Si-Si dan bertambahnya ikatan Si-C. Pengaruh konsentrasi karbon terhadap pseudo-fungsi dieiektrik kompleks mirip dengan fungsi dieiektrik kompleks.

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The complex dielectric functions of the a-Si/.,Cx:H films deposited by sputtering methods have been determined by spectroscopy ellipsometry. Optical constants of the a-Sii.xCx:H films are obtained from the MSE procedure for the experimental and model parameters y/ and A. Model of three medium systems is used to describe the a-Si/.^C^H films on corning 7059 substrate in air ambient- The complex dielectric function curves are smooth and show a maximum. The real part of dielectric function reflects the behavior of n2 and the imaginary part reflects the dependence of k on energy. The curve maximum decrease in magnitude and shift to the higher energies with the carbon concentration increase. The optical gap becomes higher with the carbon contained increase in the films but the B parameter decreases. The decrease of this parameter has been related to the increase of compositional disorder. The influence of carbon concentration on the dielectric function, optical gap and B parameter is the result of replacing Si-Si bonds by Si-C bonds. The influence of carbon concentration to the pseudo-dielectric function is similar to the dielectric function.

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The complex dielectric functions of the a-Si/.,Cx:H films deposited by sputtering methods have been determined by spectroscopy ellipsometry. Optical constants of the a-Sii.xCx:H films are obtained from the MSE procedure for the experimental and model parameters y/ and A. Model of three medium systems is used to describe the a-Si/.^C^H films on corning 7059 substrate in air ambient- The complex dielectric function curves are smooth and show a maximum. The real part of dielectric function reflects the behavior of n2 and the imaginary part reflects the dependence of k on energy. The curve maximum decrease in magnitude and shift to the higher energies with the carbon concentration increase. The optical gap becomes higher with the carbon contained increase in the films but the B parameter decreases. The decrease of this parameter has been related to the increase of compositional disorder. The influence of carbon concentration on the dielectric function, optical gap and B parameter is the result of replacing Si-Si bonds by Si-C bonds. The influence of carbon concentration to the pseudo-dielectric function is similar to the dielectric function

;Fungsi dieiektrik kompleks lapisan tipis amorfsilikon karbon (a-Sii.xCx:H) hasit deposisi sputtering telah ditentukan dengan menggunakan hasil pengukuran spektroskopi ellipsometer. Besaran optis lapisan tipis a-Si/.,Cx:H diperoleh dengan prosedur MSE terhadap tan i// dan cos A hasil eksperimen dengan tan y/ dan cos A model matematis sistem lapisan tipis. Mode! sistem tiga media digunakan untuk mendiskripsikan lapisan tipis a-Sii.xCx:H di alas substrat corning 7059 yang terletak di udara. Fungsi dieiektrik kompleks yang diperoleh merupakan kurva yang mulus terhadap energi dan memperlihatkan kehadiran maksimum kurva. Fungsi dieiektrik bagian riil si merefleksikan kuadrat bagian riil indeks bias n sedangkan fungsi dieiektrik bagian imajiner £2 mewakili karakteristik bagian imajiner indeks bias k. Peningkatan konsentrasi karbon mengurangi tinggi maksimum dan menggeser posisi maksimum kurva ke energi yang lebih tinggi. Gap optis bertambah dengan peningkatan konsentrasi karbon sedangkan parameter B berkurang dengan meningkatnya konsentrasi karbon. Berkurangnya harga parameter B berhubungan dengan peningkatan ketidak-teratwan dari sistem amorf. Pengaruh peningkatan konsentrasi karbon terhadap fungsi dieiektrik, gap optis dan parameter B merupakan akibat dari berkurangnya ikatan Si-Si dan bertambahnya ikatan Si-C. Pengaruh konsentrasi karbon terhadap pseudo-fungsi dieiektrik kompleks mirip dengan fungsi dieiektrik kompleks.

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Abstract

The complex dielectric functions of the a-Si/.,Cx:H films deposited by sputtering methods have been determined by spectroscopy ellipsometry. Optical constants of the a-Sii.xCx:H films are obtained from the MSE procedure for the experimental and model parameters y/ and A. Model of three medium systems is used to describe the a-Si/.^C^H films on corning 7059 substrate in air ambient- The complex dielectric function curves are smooth and show a maximum. The real part of dielectric function reflects the behavior of n2 and the imaginary part reflects the dependence of k on energy. The curve maximum decrease in magnitude and shift to the higher energies with the carbon concentration increase. The optical gap becomes higher with the carbon contained increase in the films but the B parameter decreases. The decrease of this parameter has been related to the increase of compositional disorder. The influence of carbon concentration on the dielectric function, optical gap and B parameter is the result of replacing Si-Si bonds by Si-C bonds. The influence of carbon concentration to the pseudo-dielectric function is similar to the dielectric function."

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